NXP Semiconductors CGD942C, Лист данных продукта

Страница: 1 / 7

1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
(DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
1.2 Features
n
High output capability
n
Excellent linearity
n
Extremely low noise
n
Excellent return loss properties
n
Rugged construction
n
Gold metallization ensures excellent reliability
1.3 Applications
n
CATV systems operating in the 40 MHz to 870 MHz frequency range
1.4 Quick reference data
[1] Direct Current (DC)
CGD942C
870 MHz, 23 dB gain power doubler amplifier
Rev. 01 — 7 June 2007 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 870 MHz 22 23 24 dB
I
tot
total current V
B
= 24 V
[1]
- 450 - mA