NXP Semiconductors BGY883, Техническое описание

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2001 Oct 31 3
NXP Semiconductors Product specification
860 MHz, 15 dB gain push-pull amplifier BGY883
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30

C; Z
S
= Z
L
= 75

Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o

6 dB;
f
r
= 860.25 MHz; V
r
= V
o

6 dB;
measured at f
p
+ f
q

f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 14.5

15.5 dB
f = 860 MHz 15
 
dB
SL slope cable equivalent f = 40 to 860 MHz 0

2 dB
FL flatness of frequency response f = 40 to 860 MHz
  
0.3 dB
s
11
input return losses f = 40 to 80 MHz 20
 
dB
f = 80 to 160 MHz 18.5
 
dB
f = 160 to 320 MHz 17
 
dB
f = 320 to 640 MHz 15.5
 
dB
f = 640 to 860 MHz 14
 
dB
s
22
output return losses f = 40 to 80 MHz 20
 
dB
f = 80 to 160 MHz 18.5
 
dB
f = 160 to 320 MHz 17
 
dB
f = 320 to 640 MHz 15.5
 
dB
f = 640 to 860 MHz 14
 
dB
s
21
phase response f = 50 MHz

45

+45 deg
CTB composite triple beat 49 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
  
61 dB
X
mod
cross modulation 49 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
  
61 dB
CSO composite second order
distortion 49 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
  
61 dB
d
2
second order distortion note 1
  
68 dB
V
o
output voltage d
im
=

60 dB; note 2 58.5 60

dBmV
F noise figure f = 50 MHz
 
6 dB
f = 550 MHz
 
7 dB
f = 650 MHz
 
7.5 dB
f = 750 MHz
 
8 dB
f = 860 MHz
 
8.5 dB
I
tot
total current consumption (DC) note 3
 
235 mA