2002 Sep 06
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
FEATURES
Internally matched to 50
Very wide frequency range (4 GHz at 3 dB bandwidth)
Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
10 dBm saturated output power at 1 GHz
High linearity (18 dBm IP3
(out)
at 1 GHz)
Low current (14.6 mA)
Unconditionally stable.
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
V
S
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
1
3
2
4
1
6
3
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:
C2-.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
3
4
V
I
S
DC supply current
14.6
mA
s
21
2
insertion power gain
f = 1 GHz
20.1
dB
NF
noise figure
f = 1 GHz
4.8
dB
P
L(sat)
saturated load power
f = 1 GHz
9.7
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
