2001 Nov 15
2
NXP Semiconductors
Product specification
550 MHz, 18.5 dB gain power doubler
amplifier
BGD502
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5
+V
B
7, 8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 550 MHz
18.8
20.8
dB
I
tot
total current consumption (DC)
V
B
= 24 V
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
i
RF input voltage
65
dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C
