20
02
Se
p
1
0
8
NXP Semiconductors
Pr
odu
c
t s
pec
ifica
tio
n
MMIC wideband amplifier
B
GA2712
Scattering parameters
V
S
= 5 V; I
S
= 12.3 mA; P
D
=
30 dBm; Z
O
= 50
; T
amb
= 25
C;
f (MHz)
s
11
s
21
s
12
s
22
K-
FACTOR
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.04752
13.48
10.9826
1.753
0.03355
2.342
0.07706
170.0
1.5
200
0.05643
22.73
11.0172
6.898
0.03308
7.340
0.07237
164.8
1.5
400
0.09546
39.62
11.0842
15.64
0.03111
15.47
0.07314
130.7
1.6
600
0.13547
37.16
11.1812
24.08
0.02829
21.84
0.07471
101.8
1.7
800
0.17466
32.62
11.3239
32.64
0.02501
26.57
0.08218
72.30
1.9
1000
0.20739
27.40
11.5760
41.38
0.02145
30.44
0.10113
47.04
2.0
1200
0.24036
23.23
11.8439
50.97
0.01788
31.20
0.11792
25.82
2.3
1400
0.26469
18.36
12.1222
61.14
0.01489
28.60
0.13314
10.96
2.6
1600
0.29368
13.54
12.3892
72.07
0.01262
22.41
0.14376
1.624
3.0
1800
0.31261
8.127
12.5808
83.89
0.01132
12.86
0.14606
13.51
3.2
2000
0.31986
1.984
12.6359
96.79
0.01102
2.369
0.13749
24.90
3.2
2200
0.32544
4.878
12.4802
110.7
0.01151
5.585
0.11928
37.21
3.1
2400
0.31554
13.05
12.2649
125.2
0.01238
9.990
0.08992
51.50
3.0
2600
0.29374
21.53
11.5087
139.8
0.01322
11.44
0.05626
68.53
3.1
2800
0.26599
28.39
10.4126
152.8
0.01362
10.70
0.02424
110.2
3.3
3000
0.21222
31.80
9.17830
163.8
0.01335
9.622
0.02731
159.1
4.0
3200
0.17076
31.52
8.12024
171.0
0.01239
10.22
0.04752
135.0
4.9
3400
0.14479
32.14
7.38827
176.5
0.01150
15.36
0.06279
132.1
5.8
3600
0.11730
35.25
6.96284
177.3
0.01108
19.97
0.07643
142.1
6.4
3800
0.08946
46.06
6.62125
171.3
0.01107
27.62
0.09760
153.5
6.7
4000
0.06606
64.65
6.32249
165.6
0.01178
34.46
0.12925
160.6
6.6
