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AN10714_1

© NXP B.V. 2010. All rights reserved.

Application note

Rev. 01 — 26 January 2010 

10 of 21

NXP Semiconductors

AN10714

Using the BLF574 in the 88 MHz to 108 MHz FM band

The 

2.2 mV/

°

C at its base is generated by Q2. This is then multiplied by the R14 : R15 

ratio for a temperature slope (i.e. approximately 

15 mV/

°

C). The multiplication function 

provided by the transistor is the reason it is used rather than a diode. A portion of the 

15 mV/

°

C is applied to the potentiometer (R1).

The amount of temperature compensation is set by resistor R4. The ideal value of which 
proved to be 2 k

Ω

. The values of R11 and R13 are not important for temperature 

compensation. However, they are used for baseband stability and to improve IMD 
asymmetry at lower power levels.

3.3 Amplifier alignment

There are several points in the circuit that allow performance parameters to be readily 
traded off against one another. In general, the following areas of the circuit have the most 
impact on the circuit operating frequency and P

L(1dB)

 performance. The modification areas 

are listed in order of sensitivity, with the most sensitive tuning elements listed first.

Effect of changing the output capacitors (C12 and C13):

This is a key tuning point in the circuit. This point has the strongest influence on the 
trade-off between efficiency and linearity.

Effect of the length of the output balun (B2):

The frequency can be shifted by modifying this element. Typically, the longer the 
balun, the more the response is shifted to lower frequencies. Conversely, a short 
balun shifts the response to higher frequencies.

Effect of changing the output 4 : 1 transformers (T3 and T4):

The frequency can be shifted by modifying these elements. In general, longer 
transformers shift the whole response to a lower frequency. Shortening the 
transformers shifts the response to higher frequencies. Changes in efficiency and 
P

L(1dB)

 is seen when the characteristic impedance of these transformers is changed.

Effect of changing the output capacitor (C14):

Changing this output capacitor has an effect of tilting the response over the band. The 
efficiency or P

L(1dB)

 performance can be made more consistent over the band by 

modifying C14.

Effect of adding capacitance off the drain (C10, C11, C15, and C16):

A small adjustment in the trade-off between efficiency and P

L(1dB)

 performance can be 

made by changing these capacitors.

Содержание AN10714

Страница 1: ...t information Info Content Keywords BLF574 600 MHz performance high voltage LDMOS amplifier implementation Class B CW FM band pulsed power Abstract This application note describes the design and the p...

Страница 2: ...2010 All rights reserved Application note Rev 01 26 January 2010 2 of 21 NXP Semiconductors AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Revision history Rev Date Description 01 20100126...

Страница 3: ...ken during the design of the high voltage process to ensure that the device achieves high ruggedness This is a critical parameter for successful broadcast operations The device can withstand greater t...

Страница 4: ...the 88 MHz to 108 MHz FM band 2 Circuit diagrams and PCB layout 2 1 Circuit diagrams Fig 1 BLF574 input circuit schematic 88 MHz to 108 MHz 001aal304 R12 R7 D1 R8 R3 R9 R4 C4 R15 R14 R10 R1 R2 R5 R11...

Страница 5: ...21 NXP Semiconductors AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Fig 2 BLF574 output circuit schematic 88 MHz to 108 MHz RF out T3 T4 L25 L15 L14 L17 L19 L21 L16 L12 L13 B2 C24 C32 C31...

Страница 6: ...ights reserved Application note Rev 01 26 January 2010 6 of 21 NXP Semiconductors AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band 2 2 BLF574 PCB layout The positions of C1 C19 and C23 are in...

Страница 7: ...itor ATC100B181JT200X American Technical Ceramics C14 6 8 pF ceramic chip capacitor ATC100B6R8CT500X American Technical Ceramics C15 C16 15 pF ceramic chip capacitor ATC100B150JT500X American Technica...

Страница 8: ...ale R5 75 resistor CRCW080575R0FKTA Vishay Dale R6 not connected R7 R9 1 1 k resistor CRCW08051K10FKEA Vishay Dale R10 11 k resistor CRCW080511K0FKEA Vishay Dale R11 5 1 resistor CRCW08055R1FKEA Visha...

Страница 9: ...the junction temperature at high operating power and results in slightly better performance When greasing the part down care must be taken to ensure that the amount of grease is kept to an absolute mi...

Страница 10: ...y with the most sensitive tuning elements listed first Effect of changing the output capacitors C12 and C13 This is a key tuning point in the circuit This point has the strongest influence on the trad...

Страница 11: ...in gain and efficiency depending on the drain voltage conditions Table 2 Class B performance of the BLF574 at 50 V 600 W This table summarizes the Class B performance of the BLF574 at 50 V IDq 200 mA...

Страница 12: ...second order harmonic performance BLF574 at 98 MHz IDq 200 mA 1 46 V 2 48 V 3 50 V 4 52 V Fig 7 Output gain and efficiency variation under different drain voltage conditions BLF574 at 98 MHz VDD 50 V...

Страница 13: ...y 2010 13 of 21 NXP Semiconductors AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band VDD 50 V IDq 200 mA 1 88 MHz 2 98 MHz 3 108 MHz Fig 9 Second order harmonics as a function of output power...

Страница 14: ...and output impedance per section Frequency MHz Input Zi Output Zo 25 2 020 j26 216 4 987 j0 241 50 2 020 j13 087 4 947 j0 477 75 2 020 j8 701 4 882 j0 705 100 2 020 j6 500 4 794 j0 922 125 2 021 j5 17...

Страница 15: ...LF574 in the 88 MHz to 108 MHz FM band 6 Base plate drawings 6 1 Input base plate Fig 11 Input base plate drawing 001aak566 Unit mm A 0 B 10 922 C 37 211 D 45 847 E 65 278 F 76 200 G 6 350 H 9 068 I 1...

Страница 16: ...108 MHz FM band 6 2 Device insert 1 0 5 mm Fig 12 Device insert drawing 001aak567 Unit mm A 0 B 10 922 C 65 278 D 76 200 E 6 350 F 11 328 G 5 156 H 10 312 I 4 978 J 11 328 K 10 185 L 1 143 M 8 N M5 1...

Страница 17: ...ent density Once the device junction temperature is measured and in depth knowledge is obtained of the average operating current for the application the TTF can be calculated using Figure 14 and the r...

Страница 18: ...ture rise Tr Pd Rth 257 W 0 4 C W 103 C Junction temperature Tj Th Tr 40 C 103 C 143 C Based on this the TTF can be estimated using a device greased down heatsink as follows The operating current is j...

Страница 19: ...E4419B TENULINE 30 dB 1 kW RF LOW PASS FILTER NETWORK ANALYZER HP8753D POWER SENSOR HP8481A POWER SENSOR HP8481A SPINNER SWITCH 10 30 10 DRIVER AMPLIFIER Ophir 5127 COUPLER HP778D NARDA 3020A ANZAC CH...

Страница 20: ...riptions at any time and without notice This document supersedes and replaces all information supplied prior to the publication hereof Suitability for use NXP Semiconductors products are not designed...

Страница 21: ...rison for Class B and Class AB amplifiers 12 Fig 9 Second order harmonics as a function of output power against frequency 13 Fig 10 Device impedance convention 14 Fig 11 Input base plate drawing 15 Fi...

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