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2004 Microchip Technology Inc.
Advance Information
DS70119B-page 43
dsPIC30F6010
6.0
FLASH PROGRAM MEMORY
The dsPIC30F family of devices contains internal
program Flash memory for executing user code. There
are two methods by which the user can program this
memory:
1.
In-Circuit Serial Programming™ (ICSP™)
2.
Run Time Self-Programming (RTSP)
6.1
In-Circuit Serial Programming
(ICSP)
dsPIC30F devices can be serially programmed while in
the end application circuit. This is simply done with two
lines for Programming Clock and Programming Data
(which are named PGC and PGD respectively), and
three other lines for Power (V
DD
), Ground (V
SS
) and
Master Clear (MCLR). this allows customers to manu-
facture boards with unprogrammed devices, and then
program the microcontroller just before shipping the
product. This also allows the most recent firmware or a
custom firmware to be programmed.
6.2
Run Time Self-Programming
(RTSP)
RTSP is accomplished using
TBLRD
(table read) and
TBLWT
(table write) instructions.
With RTSP, the user may erase program memory, 32
instructions (96 bytes) at a time and can write program
memory data, 32 instructions (96 bytes) at a time.
6.3
Table Instruction Operation Summary
The
TBLRDL
and the
TBLWTL
instructions are used to
read or write to bits <15:0> of program memory.
TBLRDL
and
TBLWTL
can access program memory in
Word or Byte mode.
The
TBLRDH
and
TBLWTH
instructions are used to read
or write to bits<23:16> of program memory.
TBLRDH
and
TBLWTH
can access program memory in Word or
Byte mode.
A 24-bit program memory address is formed using
bits<7:0> of the TBLPAG register and the effective
address (EA) from a W register specified in the table
instruction, as shown in Figure 6-1.
FIGURE 6-1:
ADDRESSING FOR TABLE AND NVM REGISTERS
0
Program Counter
24 bits
NVMADRU Reg
8 bits
16 bits
Program
Using
TBLPAG Reg
8 bits
Working Reg EA
16 bits
Using
Byte
24-bit EA
1/0
0
1/0
Select
Table
Instruction
NVMADR
Addressing
Counter
Using
NVMADR Reg EA
User/Configuration
Space Select
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