2
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DC
-
0026091
2
MAAL-011207-QR3000
Rev. V4
Low Noise Amplifier
0.15 - 6 GHz
Electrical Specifications: Freq = 1.9 GHz, V
DD
= 3 V, +25ºC, Z
0
= 50 Ω,
V
BIAS
= 2.3 V
5
Noise Figure
-
dB
—
0.35
0.7
Gain
-
dB
21
23
25
Input Return Loss
6
-
dB
—
5
—
Output Return Loss
6
-
dB
—
5
—
Output IP3
P
IN
=
-
22 dBm, tones 11 MHz apart
dBm
—
33
—
Output P1dB
-
dBm
—
17.5
—
Total Current
I
DQ
= I
DD
+ I
BIAS
mA
39
50
68
RF Input Power CW
19 dBm
V
DD
6 V
V
BIAS
5 V
Storage Temperature
-
55ºC to +150ºC
Operating Temperature
-
40ºC to +105ºC
Junction Temperature
10
+150ºC
Absolute Maximum Ratings
7,8,9
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1A HBM
devices.
5.
Refer to biasing options on page 3.
6.
Return Loss can be improved with external matching components. Refer to application section.
7.
Exceeding any one or combination of these limits may cause
permanent damage to this device.
8.
MACOM does not recommend sustained operation near these
survivability limits.
9.
Operating at nominal conditions with T
J
≤
150°C will ensure
MTTF > 1 x 10
6
hours.
10.Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I)
-
(P
OUT
-
P
IN
))
Typical thermal resistance (
Ө
JC
) = 83°C/W
a) For T
C
= +25°C,
T
J
= 33°C @ 3V, 0.05 A, P
OUT
= 17.5 dBm, P
IN
=
-
4.5 dBm
b) For T
C
= +85°C,
T
J
= 93°C @ 3V, 0.05 A, P
OUT
= 17.5 dBm, P
IN
=
-
4.5 dBm