Linear Technology LT8611, Руководство пользователя

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LT8611
3
8611fa
For more information www.linear.com/LT8611
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT8611E is guaranteed to meet performance specifications
from 0°C to 125°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization, and correlation with statistical process controls. The
LT8611I is guaranteed over the full –40°C to 125°C operating junction
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.
PARAMETER CONDITIONS MIN TYP MAX UNITS
INTV
CC
Undervoltage Lockout 2.5 2.6 2.7 V
BIAS Pin Current Consumption V
BIAS
= 3.3V, I
LOAD
= 1A, 2MHz 8.5 mA
Minimum On-Time I
LOAD
= 1A, SYNC = 0V
I
LOAD
= 1A, SYNC = 3.3V
l
l
30
30
50
45
70
65
ns
ns
Minimum Off-Time 50 80 110 ns
Oscillator Frequency R
T
= 221k, I
LOAD
= 1A
R
T
= 60.4k, I
LOAD
= 1A
R
T
= 18.2k, I
LOAD
= 1A
l
l
l
180
665
1.85
210
700
2.00
240
735
2.15
kHz
kHz
MHz
Top Power NMOS On-Resistance V
INTVCC
= 3.4V, I
SW
= 1A 120 mΩ
Top Power NMOS Current Limit V
INTVCC
= 3.4V
l
3.5 4.8 5.8 A
Bottom Power NMOS On-Resistance V
INTVCC
= 3.4V, I
SW
= 1A 65 mΩ
Bottom Power NMOS Current Limit V
INTVCC
= 3.4V 2.5 3.3 4.8 A
SW Leakage Current V
IN
= 42V, V
SW
= 0V, 42V –1.5 1.5 µA
EN/UV Pin Threshold EN/UV Rising
l
0.94 1.0 1.06 V
EN/UV Pin Hysteresis 40 mV
EN/UV Pin Current V
EN/UV
= 2V –20 20 nA
PG Upper Threshold Offset from V
FB
V
FB
Falling
l
6 9.0 12 %
PG Lower Threshold Offset from V
FB
V
FB
Rising
l
–6 –9.0 –12 %
PG Hysteresis 1.3 %
PG Leakage V
PG
= 3.3V –40 40 nA
PG Pull-Down Resistance V
PG
= 0.1V
l
680 2000 Ω
SYNC Threshold SYNC Falling
SYNC Rising
0.8
1.6
1.1
2.0
1.4
2.4
V
V
SYNC Pin Current V
SYNC
= 2V –40 40 nA
TR/SS Source Current
l
1.2 2 3.2 µA
TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 230 Ω
Current Sense Voltage (V
ISP-ISN
) V
ICTRL
= 1.5V, V
ISN
= 3.3V
V
ICTRL
= 1.5V, V
ISN
= 0V
V
ICTRL
= 800mV, V
ISN
= 3.3V
V
ICTRL
= 800mV, V
ISN
= 0V
V
ICTRL
= 200mV, V
ISN
= 3.3V
V
ICTRL
= 200mV, V
ISN
= 0V
l
l
l
l
l
l
48
46
38
37
5
4
50
50.5
41
42
10
10.5
52
56
46
47
15
17
mV
mV
mV
mV
mV
mV
IMON Monitor Pin Voltage V
ISP-ISN
= 50mV, V
ISN
= 3.3V
V
ISP-ISN
= 50mV, V
ISN
= 0V
V
ISP-ISN
= 10mV, V
ISN
= 3.3V
V
ISP-ISN
= 10mV, V
ISN
= 0V
l
l
l
l
0.960
0.890
130
110
1.00
0.99
220
205
1.040
1.090
320
300
V
V
mV
mV
ISP, ISN Pin Bias Current
l
–20 20 µA
temperature range. High junction temperatures degrade operating
lifetimes. Operating lifetime is derated at junction temperatures greater
than 125°C.
Note 3: This IC includes overtemperature protection that is intended to
protect the device during overload conditions. Junction temperature will
exceed 150°C when overtemperature protection is active. Continuous
operation above the specified maximum operating junction temperature
will reduce lifetime.