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Copyright © 2009 LG Electronics. Inc. All right reserved.
Only for training and service purposes
LGE Internal Use Only
3. Technical Brief
3.11. External memory interface
A. MSM7200A
The MSM7200A device was designed to provide two distinct memory interfaces. EBI1 was
targeted for supporting DDR synchronous memory devices. EBI2 was targeted
towards supporting slower asynchronous devices such as LCD, NAND flash, SRAM,
NOR flash etc. To support the high-bandwidth, high-density, and low-latency requirements of the
advanced on-chip applications, the MSM7200A IC has two high-speed, high-performance memory
slave interfaces: the external bus interface 1 (EBI1) and the stack memory interface (SMI). To
achieve higher bandwidth and better use of the memory device interface, the SMI accepts multiple
commands for the external memory device. The SMI interface acts as a slave device to all of the
bus masters within the MSM device. The masters arbitrate to gain access to the SMI, and upon
obtaining the access, they issue commands to the SMI. The bus masters are connected to the SMI
through an advanced extensible interface (AXI) bus bridge (or global interconnect block) and
communicate over a 64-bit, non-blocking AXI bus protocol. The AXI bus bridge provides the
arbitration logic for all of the bus masters.
y
EBI1 Features
- Support for only low-power memories at 1.8-V I/O power supply voltage
- AXI bus frequencies up to 133 MHz
- A 16-bit/32-bit static and dynamic memory interface
y
DDR SDRAM interface features include:
- Supports both 32-bit DDR SDRAM devices, up to 133-MHz bus speed
- Supports auto pre-charge and manual pre-charge
- Supports partial refresh
- Separate CKE pin per chip-select to support partial operation mode
- Idle power down to save idling power consumption
y
EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices(UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(8 or 16 bit)
y
Multi Chip Package : DDR SDRAM and NAND Flash merged 1 package
y
2Gbit Mobile DDR SDRAM(64Mb x32) / 4Gbit NAND Flash
1.8V
1.8V
45ns / 333MHz
Hynix
NAND
Interface Spec
Product Gr
Part Name
Maker
Operation Voltage
(Flash / DRAM)
Speed
(Flash / DRAM)
Table#1. External memory interface for GM750
H8BCS0UN0MCR
-46M
SDRAM
Содержание Vodafone GM750
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