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3. TECHNICAL BRIEF
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LGE Internal Use Only
Copyright © 011 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3.7.1.1 NAND
Figure. 3.7.2 NAND Part Block Diagram
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Supply Voltage
-Vcc = 1.7 - 1.95 V
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Memory Cell Array
-(1 K + 32) Words x 64 pages x 1024 blocks
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Page Size
-(1 K + 32 spare) Words
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Block Size
-(64 K + 2 K spare) Words
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Page Read / Program
- Random access : 25us (max.)
- Sequential access : 45ns (min.)
-Page program time : 200us (typ.)
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COPY BACK PROGRAM MODE
-Fast page copy without external buffering
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FAST BLOCK ERASE
-Block erase time: 2.0ms (typ.)
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STATUS REGISTER
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DATA RETENTION
- 100,000 Program/Erase cycles
(with 1bit/528byte ECC)
- 10 years Data Retention
[ NAND Flash ]