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3. TECHNICAL BRIEF
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3.7 Memory
The K5D1G12ACE is a Multi Chip Package Memory which combines 1Gbit Nand Flash Memory and
512Mbit synchronous high data rate Dynamic RAM.
Offered in 128Mx8bits, the NAND Flash is 1Gbit with spare 32Mbit capacity. The device is offered in
1.8V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage
market. A program operation can be performed in typical 200µs on the 528-bytes and an erase
operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at
42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as
command input. The on-chip write control automates all program and erase functions including pulse
repetition, where required, and internal verification and margining of data. Even the write-intensive
systems can take advantage of the device’s extended reliability of 100K program/erase cycles by
providing ECC(Error Correcting Code) with real time mapping-out algorithm. The device is an optimum
solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
The 512Mb Mobile SDRAM is 536,870,912 bits synchronous high data rate Dynamic RAM organized
as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable burst lengths and
programmable latencies allow the same device to be useful for a variety of high bandwidth and high
performance memory system applications.