Kenwood TKR-720(N), Руководство по обслуживанию

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NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed
primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability
under rated operating conditions. Internal impedance matching ensures optimum power gain and
efficiency over the 136
−
175MHz band.
Features:
D
175MHz
D
12.5 Volts
D
P
OUT
= 100 Watts
D
G
P
= 6.0dB Minimum
D
Common Emitter Configuration
Absolute Maximum Ratings: (T
C
= +25
°
C unless otherwise specified)
Collector
−
Base Voltage, V
CBO
36V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector
−
Emitter Voltage, V
CEO
18V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector
−
Emitter Voltage, V
CES
36V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter
−
Base Voltage, V
EBO
4V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (Peak), I
C
20A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
270W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operatin Junction Temperature, T
J
+200
°
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
−
65
°
to +150
°
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction
−
to
−
Case, R
thJC
0.65
°
C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
°
C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector
−
Base Breakdown Voltage V
(BR)CBO
I
C
= 50mA, I
E
= 0 36
− −
V
Collector
−
Emitter Breakdown Voltage V
(BR)CES
I
C
= 100mA, V
BE
= 0 36
− −
V
V
(BR)CEO
I
C
= 100mA, I
B
= 0 18
− −
V
Emitter
−
Base Breakdown Voltage V
(BR)EBO
I
E
= 10mA, I
C
= 0 4
− −
V
Collector Cutoff Current I
CES
V
CE
= 15V, I
E
= 0
− −
15 mA
ON Characteristics
DC Current Gain h
FE
I
C
= 5A, V
CE
= 5V 10 75 150