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1 Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector – Emitter Voltage VCEO 40 Vdc
Collector – Base Voltage VCBO 60 Vdc
Emitter – Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD 225
1.8
mW
mW/
°
C
Thermal Resistance Junction to Ambient R q
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
PD 300
2.4
mW
mW/
°
C
Thermal Resistance Junction to Ambient R q
JA
417
°
C/W
Junction and Storage Temperature TJ, Tstg – 55 to +150
°
C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 40 — Vdc
Collector – Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO 60 — Vdc
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO 6.0 — Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL — 50 nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX — 50 nAdc
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT3904LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)

Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
JBL 150P / 230V Service Manual
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