User Manual
X0116715 Rev.1.0
Page 1
Jan.12.21
The ISL73033SLHEV1Z evaluation board evaluates the performance of the ISL73033SLH. The ISL73033SLH is
a radiation hardened Driver-GaN Power Stage that integrates a 4.5V gate driver and a 100V, 7.5m
Ω
enhancement-mode Gallium Nitrade FET (eGaN FET) in a single 8mmx8mm BGA package. The device simplifies
the Printed Circuit Board (PCB) layout by integrating a driver plus GaN FET in one package and is designed for
boost and isolated DC/DC converter topologies. The driver operates with a supply voltage from 4.5V to 13.2V and
has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting logic
drives with a single device.
The ISL73003SLHEV1Z evaluation board is configured as a common-source open drain 100V current sense load
switch with three on board 2512 sized 220m
Ω
resistors in parallel (73.3m
Ω
).
Specifications
▪
Gate Driver Supply Voltage Range: 4.5V to 13.2V
▪
GaN FET Drain-to-Source Voltage: 100V (80V
DC
maximum recommended operation)
▪
Recommended Operating Frequency: Up to 5MHz (limited by Drain-Source rise and fall times)
▪
Board Dimension: 4cm x 4.5cm
▪
Board Layers: 4
▪
Board PCB Copper Weight: 2oz outer; 1oz inner
▪
Board Revision: A
Ordering Information
Related Literature
For a full list of related documents, visit our website:
▪
device page
Part Number
Description
ISL73033SLHEV1Z
ISL73033SLH evaluation board
Figure 1. ISL73033SLHEV1Z Block Diagram
ISL73033SLH
VDD
VDRV
IN
DRAIN
SOURCE
0.
2
2
Ω
0.
2
2
Ω
0.
2
2
Ω
0.
2
2µ
F
0.
2
2µ
F
0.
2
2µ
F
0.
2
2µ
F
0.
2
2µ
F
0.
2
2µ
F
PVIN
GND
ISL73033SLHEV1Z
Evaluation Board
