Datasheet
29
Electrical Specifications
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TTA
referred to in these specifications refers to instantaneous V
TTA
.
3.
For Vin between 0 V and V
TTA
. Measured when the driver is tristated.
4.
V
IH
and V
OH
may experience excursions above V
TT
.
5.
COMP resistance must be provided on the system board with 1% resistors. See the applicable platform
design guide for implementation details. COMP0 resistors are to V
SS
.
2.11.2
V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot above
VID). These specifications apply to the processor die voltage as measured across the
VCC_SENSE and VSS_SENSE lands.
Table 2-15. Control Sideband Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
—
—
0.64
*
V
TTA
V
2
V
IH
Input High Voltage
0.76
*
V
TTA
—
—
V
2
V
OL
Output Low Voltage
—
—
V
TTA
* R
ON
/ (R
ON
+ R
sys_term
)
V
2,4
V
OH
Output High Voltage
V
TTA
—
—
V
2,4
Ron
Buffer on Resistance
10
—
18
Ω
Ron
Buffer on Resistance for
VID[7:0]
—
100
—
Ω
I
LI
Input Leakage Current
—
—
± 200
μ
A
3
COMP0
COMP Resistance
49.4
49.9
50.40
Ω
5
Table 2-16. V
CC
Overshoot Specifications
Symbol
Parameter
Min
Max
Units
Figure
Notes
V
OS_MAX
Magnitude of V
CCP
overshoot above VID
—
50
mV
T
OS_MAX
Time duration of V
CCP
overshoot above VID
—
25
µs
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