Datasheet
101
Electrical Specifications
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TT
referred to in these specifications refers to instantaneous V
TT
.
3.
Refer to the processor
I/O Buffer Models
for I/V characteristics.
4.
For V
IN
between “0” V and V
TT
. Measured when the driver is tristated.
5.
V
IH
and V
OH
may experience excursions above V
TT
. However, input signal drivers must comply with the
signal quality specifications.
6.
COMP resistance must be provided on the system board with 1% resistors. COMP resistors are to V
SS
.
7.
R
SYS_TERM
is the system termination on the signal.
Table 7-44.Control Sideband and TAP Signal Group DC Specifications
Symbol
Alpha Group
Parameter
Min
Typ
Max
Units Notes
1,8
V
IL
(m),(n),(p),(s)
Input Low Voltage
0.64
*
V
TT
V
2,3
V
IH
(m),(n),(p),(s)
Input High Voltage
0.76
*
V
TT
V
2,3,5
V
IL
(g)
Input Low Voltage
0.25
*
V
TT
V
2,3
V
IH
(g)
Input High Voltage
0.80
*
V
TT
V
2,3,5
V
IL
(ga)
Input Low Voltage
0.4
*
V
TT
V
2,3
V
IH
(ga)
Input High Voltage
0.75
*
V
TT
V
2,3,5
V
IL
(qa)
Input Low Voltage
0.38
*
V
TT
V
2,3
V
IH
(qa)
Input High Voltage
0.70
*
V
TT
V
2,3,5
V
IL
(ja),(qb)
Input Low Voltage
0.25
*
V
TT
V
2,3
V
IH
(ja),(qb)
Input High Voltage
0.75
*
V
TT
V
2,3,5
V
IL
(jb)
Input Low Voltage
0.29
2,3
V
IH
(jb)
Input High Voltage
0.87
V
2,3,5
V
OL
(k),(l),(n),(p),
(r),(s),(ab),(h),(i)
Output Low Voltage
V
TT
* R
ON
/
(R
ON
+
R
SYS_TERM
)
V
2,7
V
OH
(k),(l),(n),(p),(r),(s),(
ab),(i)
Output High Voltage
V
TT
V
2,5
R
ON
(k),(l),(n),(p),(r),(s),(i
)
Buffer on Resistance
10
18
Ω
R
ON
(ab)
Buffer on Resistance
20-30
27-45
Ω
I
LI
(ja),(jb),(m),(n),(p),(
qa),(s),(t),(aa),(g)
Input Leakage Current
±200
μ
A
4
I
LI
(qb)
Input Leakage Current
±150
μ
A
4
COMP0
(t)
COMP Resistance
49.4
49.9
50.4
Ω
6
COMP1
(t)
COMP Resistance
49.4
49.9
50.4
Ω
6
COMP2
(t)
COMP Resistance
19.8
20
20.2
Ω
6
COMP3
(t)
COMP Resistance
19.8
20
20.2
Ω
6
