January 2007
95
Intel
®
855GME Chipset and Intel
®
6300ESB ICH Embedded Platform Design Guide
Compared to options 1-3, option 4 represents cost- and space-optimized decoupling solutions that
provide a competitive level of VRM performance and efficiency. Option 4 is the recommended
V
CC-CORE
decoupling solution for Intel Pentium M/Celeron M processor-based systems and offers
the best balance of performance, cost, and motherboard surface area requirements.
An example layout implementation of the recommended option 4 is illustrated in
,
, and
and
show how the four, low-frequency SP
decoupling capacitors are placed on the secondary side and connected to the AF signal row of the
Intel Pentium M/Celeron M processor pins with a solid V
CC-CORE
flood area along with eight of
the mid-frequency 0805 ceramic mecoupling capacitors that are in between. To minimize the
inductance of the SP capacitor connection for the layout style shown, the sense resistors’ VRM
feed is on the positive terminal side of the SP capacitors. In this case each of the SP capacitors is
connected to two pairs of V
CC-CORE
/GND vias on the positive terminal. Refer to
for
more details. When the VRM sense resistors connect from the negative side of the SP capacitors,
two pairs of V
CC-CORE
/GND vias are needed on both positive and negative terminals of the SP
capacitors.
Thirty-two 10 µF, 0805 capacitors are placed on the secondary side (Layer 8) while the remaining
three are placed on the primary side (Layer 1). Six of the 10-µF capacitors are placed outside the
socket outline with a 90-mil (or closer) pitch (as shown in
) and are divided evenly on
either side for the four 220 µF bulk capacitors (three to the left and three to the right of the SP
capacitors). Each of these six 0805 capacitors have a pair of V
CC-CORE
and GND stitching vias
next to both positive and negative terminals of the capacitors. The stitching vias connect to the
internal ground and V
CC-CORE
planes, respectively.
Table 21. Intel
®
Pentium
®
M/Celeron
®
M Processor V
CC-CORE
Decoupling Guidelines
Option
Description
Cap ESR ESL
1
Low-Frequency Decoupling (Polymer-Covered
Tantalum – POSCAP, Neocap, KO Cap)
12 x 150 µF
36 m
Ω
(typ)/12
2.5 nH/12
Mid-Frequency Decoupling
(0612 MLCC, >= X5R)
15 x 2.2 µF
5 m
Ω
(typ)/15
0.2 nH/15
2
Low-Frequency Decoupling
(1206 MLCC, >= X5R)
40 x 10 µF
5 m
Ω
(typ)/40
1.2 nH/40
Mid-Frequency Decoupling
(0612 MLCC, >= X5R)
15 x 2.2 µF
5 m
Ω
(typ)/15
0.2 nH/15
3
Low-Frequency Decoupling
(Polymer-Covered Aluminum – SP Cap, A0 Cap)
5 x 330 µF
15 m
Ω
(max)/5
3.5 nH/5
Low-Frequency Decoupling (1206 MLCC, >= X5R)
25 x 10 µF
5 m
Ω
(typ)/25
1.2 nH/25
Mid-Frequency Decoupling (0612 MLCC, >= X5R)
15 x 2.2 µF
5 m
Ω
(typ)/15
0.2 nH/15
4
Low-Frequency Decoupling (Polymer-Covered
Aluminum – SP CAP, AO Cap)
4 x 220
μ
F
12 m
Ω
(max)/4
3.5 nH/4
Mid-Frequency Decoupling (0805 MLCC>= X5R)
35 x 10
μ
F
5 m
Ω
(typ)/35
0.6 nH/35
†
Option 4 is to be used with small footprint (100 mm
2
or less) 0.36 µH
±
20% inductors.
Содержание 6300ESB ICH
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Страница 36: ...36 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide General Design Considerations...
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Страница 152: ...152 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide System Memory Design Guidelines DDR SDRAM...
Страница 172: ...172 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Integrated Graphics Display Port...
Страница 190: ...190 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Hub Interface...
Страница 246: ...246 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Intel 6300ESB Design Guidelines...
Страница 264: ...264 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Platform Clock Routing Guidelines...
Страница 298: ...298 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Schematic Checklist Summary...
Страница 318: ...318 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Layout Checklist...