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User Guide EVAL-1ED020I12F2-DB

 

13 of 28 

v1.0 

 

 

2021-06-21 

EVAL-1ED020I12F2-DB user guide 

Isolated driver daughter board to evaluate 1200 V CoolSiC™ MOSFET 

Fehler! Verwenden Sie die Registerkarte 'Start', um Heading 1;Heading1 dem Text 
zuzuweisen, der hier angezeigt werden soll. 

 

 

Figure 7

 

Motherboard equipped wit daughterboard and SiC MOSFET´s for low-side measurements 

Especially in this configuration (wiring of the load) the arrangement can be used for low-side measurements. 
Power switch Q2 is now the DUT (device under test). 

A configuration for high-side measurements is shown in Chapter 4.1.3. 

 

 

 

X202

Gate_LS

Gate_HS

1

ED

020

I12

-F

2

DESAT

OUT

CLAMP

EVAL-1ED020I12F2-DB

(daughter board)

High-side

Low-side

R

Gate

R

DESAT

0 

  

C

DESAT

R

Gate

R

DESAT

0 

  

C

DESAT

D

DESAT

D

DESAT

1

ED

020

I12

-F

2

DESAT

OUT

CLAMP

D

G

S

D

G

S

V

DC

X200

X201

X101

+

-

Load

X150

X151

X152

R

Shunt

X105

X102

800 V

+

-

12 V

+ 12V

+ 

VD

C

GND1

M

id

p

o

in

t

(p

h

a

s

e

)

G

N

D

-Se

c

µController

Evaluation platform 

(mother board)

Q1

Q2

phase

Содержание EVAL-1ED020I12F2-DB

Страница 1: ...how to operate the evaluation board EVAL 1ED020I12F2 DB daughterboard together with the Evaluation platform 1200V CoolSiC MOSFET in TO247 3pin 4pin Rev 2 motherboard Intended audience This document is...

Страница 2: ...ey are operated by the customer The customer shall ensure that all Evaluation Boards and Reference Boards will be handled in a way which is compliant with the relevant requirements and standards of th...

Страница 3: ...removing power to discharge the bus capacitors Do not attempt to service the drive until the bus capacitors have discharged to zero Failure to do so may result in personal injury or death Caution The...

Страница 4: ...of the daughterboard 10 2 1 1 Stand alone 10 2 1 2 Usage with motherboard 10 2 2 Description of the functional blocks 12 2 2 1 Basic operation 12 2 2 2 First steps for start up 14 3 System design 15...

Страница 5: ...a flexible driver card e g evaluation board EVAL 1ED020I12F2 DB The modular approach enables future expansion of the platform with additional gate driver cards This means the driver card is connected...

Страница 6: ...e 1200 V CoolSiC MOSFET Fehler Verwenden Sie die Registerkarte Start um Heading 1 Heading1 dem Text zuzuweisen der hier angezeigt werden soll Figure 2 Bottom view of evaluation daughterboard EVAL 1ED0...

Страница 7: ...ure 4 Bottom view motherboard 1 1 Delivery content Content of delivery is the EVAL 1ED020I12F2 DB board packed in a box The evaluation platform EVAL PS DP MAIN can be ordered seperatly Since different...

Страница 8: ...to the evaluation platform and the corresponding connector X100 on this platform As interface to the power switches acting the connectors X200 and X201 see Figure 5 with the gate signal the source con...

Страница 9: ...and technical data The key specifications of this board are displayed in Table 2 Table 2 Parameter Parameter Symbol Value max Unit Test condition Positive power supply output side VCC2 20 V 1 Negative...

Страница 10: ...ated by the white marker line On the primary side four connectors are visible X105 X102 X101 and X100 The 12 V supply voltage on the low voltage side is connected red colored positive pole to X102 and...

Страница 11: ...EVAL 1ED020I12F2 DB ADJ 20V 0V 5V ADJ X X X X X X X X X X X X The settings for the adjustable driver voltages are made using the potentiometer R105 and R102 for the high side driver and with potentio...

Страница 12: ...or X202 delivers all the necessary control signals IN IN FLT RDY and RST as well as the electrical power VCC1 and GND1 to the primary side of both gate driver ICs More detailed information can be foun...

Страница 13: ...n this configuration wiring of the load the arrangement can be used for low side measurements Power switch Q2 is now the DUT device under test A configuration for high side measurements is shown in Ch...

Страница 14: ...the needs of the corresponding drivers at the daughterboard 4 If an adjustable powersupply has been selected VCC2 and VEE2 has to be set by the potentiometer according to details described in Chapter...

Страница 15: ...uweisen der hier angezeigt werden soll 3 System design 3 1 Schematics Figure 8 shows the drawing of the daughterboard 1ED020I12F2 DB Figure 8 Drawing of EVAL 1ED020I12F2 DB 3 2 Layout The following fi...

Страница 16: ...user guide Isolated driver daughter board to evaluate 1200 V CoolSiC MOSFET Fehler Verwenden Sie die Registerkarte Start um Heading 1 Heading1 dem Text zuzuweisen der hier angezeigt werden soll Figure...

Страница 17: ...er guide Isolated driver daughter board to evaluate 1200 V CoolSiC MOSFET Fehler Verwenden Sie die Registerkarte Start um Heading 1 Heading1 dem Text zuzuweisen der hier angezeigt werden soll Figure 1...

Страница 18: ...ries TDK Corporation 445 12409 1 ND 100 pF C4 C5 C10 C11 Surface Mount Multilayer Ceramic Chip Capacitor Kemet BAT165 D1 D2 D4 D5 D6 D7 D8 D10 D11 D12 Medium Power AF Schottky Diode Infineon Technolog...

Страница 19: ...ng Tables 5 6 and 7 list the respective signal assignments corresponding to the plug connections Table 5 Connector X202 Primary side PIN Label Function 1 VCC1 Power supply primary side 2 VCC1 Power su...

Страница 20: ...h side HIGH VOLTAGE 4 HS_GND_SEC Ground high side secondary side HIGH VOLTAGE 5 HS_VOFF 0 5 V Negative power supply VEE2 high side 6 HS_GND_SEC Ground high side secondary side HIGH VOLTAGE 7 8 9 10 HS...

Страница 21: ...in Figure 13 The cathode of the high voltage diode is connected directly to the drain of the SiC MOSFET This diode prevents the high voltage from reaching the gate driver The DESAT module only works w...

Страница 22: ...source the charging time of the capacitor can be calculated using Equation 1 from Figure 14 It should be noted that any capacitance which is in some way connected to the DESAT pin protection diodes c...

Страница 23: ...rt circuit at low side The second measurement example is shown in Figure 16 to and demonstrates a short circuit measurement in low side configuration In this case the load as shown in Figure 7 is repl...

Страница 24: ...erence between the arrangements in Figure 7 and Figure 17 is that the switch Q1 is now the DUT A short cable is connected accordingly between X151 and RShunt The digital signals from the Controller sh...

Страница 25: ...re similar to result in Chapter 4 1 2 Figure 16 The difference is that the phase voltage V_Phase increases from zero up to approximat 620 V when Q1 is switched on Due to the steep rise and the high va...

Страница 26: ...n Sie die Registerkarte Start um Heading 1 Heading1 dem Text zuzuweisen der hier angezeigt werden soll 5 References and appendices 5 1 Abbreviations and definitions Table 8 Abbreviations Abbreviation...

Страница 27: ...0I12F2 DB 27 of 28 v1 0 2021 06 21 EVAL 1ED020I12F2 DB user guide Isolated driver daughter board to evaluate 1200 V CoolSiC MOSFET Revision history Revision history Document version Date of release De...

Страница 28: ...nditions and prices please contact your nearest Infineon Technologies office www infineon com WARNINGS Duetotechnicalrequirementsproductsmaycontain dangerous substances For information on the types in...

Страница 29: ...Mouser Electronics Authorized Distributor Click to View Pricing Inventory Delivery Lifecycle Information Infineon EVAL1ED020I12F2DBTOBO1...

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