AN8849SB
■
Electrical Characteristics at T
a
=
25
°
C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
NRF detection
NRF det. detection level
V
RDA1
f
=
500 kHz, V
GC
=
V
REF2
−
0.75 V
73
105
137
mV[p-p]
NRF det. high-level output
V
RDAH
f
=
500 kHz, V
GC
=
V
REF2
−
0.75 V
4.2
V
voltage
NRF det. low-level output
V
RDAL
f
=
500 kHz, V
GC
=
V
REF2
−
0.75 V
0.8
V
voltage
NRF det. detection level ratio
B
RDA
f
=
500 kHz, V
GC
=
V
REF2
2.9
3.9
4.9
BDO
CBDO detection current
I
BDO
V
CC1
=
5 V, V
CC2
=
3.3 V
0.98
1.40
1.82
µ
A
EQSW
=
V
REF2
−
0.5 V
CBDO detection current ratio
B
IBD4
V
CC1
=
5 V, V
CC2
=
3.3 V
3.0
3.8
4.6
EQSW
=
V
REF2
BDO high-level output voltage
V
BDOH
V
CC1
=
5 V, V
CC2
=
3.3 V
4.2
V
f
=
5 kHz, rectangular wave
BDO low-level output voltage
V
BDOL
V
CC1
=
5 V, V
CC2
=
3.3 V
0.8
V
f
=
5 kHz, rectangular wave
OFTR
COFTR detection current
I
OFTR
V
CC1
=
5 V, V
CC2
=
3.3 V
0.98
1.40
1.82
µ
A
EQSW
=
V
REF2
−
0.5 V
COFTR detection current ratio
B
IOFTR4
V
CC1
=
5 V, V
CC2
=
3.3 V
3.0
3.8
4.6
EQSW
=
V
REF2
OFTR high-level output voltage V
OFTRH
V
CC1
=
5 V, V
CC2
=
3.3 V
4.2
V
f
=
5 kHz, rectangular wave
OFTR low-level output voltage
V
OFTRL
V
CC1
=
5 V, V
CC2
=
3.3 V
0.8
V
f
=
5 kHz, rectangular wave
Masking operating voltage 1
V
MASK1
f
=
40 kHz, V
IN
=
100 mV[p-p]
0.35
V
Masking operating voltage 2
V
MASK2
f
=
40 kHz, V
IN
=
100 mV[p-p]
0.65
V
3TENV
CEA to ENV
G
CEA
−
ENV
V
CC1
=
5 V, V
CC2
=
3.3 V
20.0
23.0
26.0
dB
transfer characteristics
CEA input impedance
Z
CEA
V
CC1
=
5 V, V
CC2
=
3.3 V
6.8
8.8
10.8
k
Ω
ENV amp. output impedance
Z
ENV
V
CC1
=
5 V, V
CC2
=
3.3 V
6.4
8.4
10.4
k
Ω
ENV amp. offset voltage
V
ENVOF
V
CC1
=
5 V, V
CC2
=
3.3 V
−
100
0
100
mV
ENV amp. operation
V
ENV
V
CC1
=
5 V, V
CC2
=
3.3 V
270
540
810
mV[p-p]
f
=
800 kHz, AM modulation
LD APC
LD operating reference voltage
V
LD
V
CC1
=
5 V, V
CC2
=
3.3 V
135
170
205
mV
LDON operating voltage
V
LDON
V
CC1
=
5 V, V
CC2
=
3.3 V
−
0.35
V
FL8380
44
Содержание FL 8380
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