Foxconn H55M Series, Руководство пользователя

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► DRAM tRP (Precharge Command Period)
This item allows you to select the row precharge time (in clock cycles).
► DRAM tRCD (RAS-to-CAS Delay)
This item allows you to select a delay time (in clock cycles) between the CAS# and RAS#
strobe signals.
► DRAM tWR (Write Recovery)
This item allows you to select the write recovery time (in clock cycles).
► DRAM tRFC(Auto-Refresh-to-Active/Auto-Refresh Command Period)
Refresh to Refresh or Refresh to Active command interval.
► DRAM tWTR (Internal Write to Read Command Delay)
This item allows you to select a delay time (in clock cycles) between sending the last data
from a write operation to the memory and issuing a read command.
► DRAM tRRD (Active-to-Active of a Different Bank)
This item allows you to select a delay time (in clock cycles) between the RAS# and RAS#
strobe signals.
► DRAM tRTP (Internal Read to Precharge Command Delay)
This item allows you to set the delay time (in clock cycles) between read command and pre-
charge command.
► DRAM tFAW(Four Active Window Delay)
Specifies the time window in which four activates are allowed the same rank.
► Adjust DRAM Voltage
This item is used to change the memory voltage.