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© 2013 Fairchild Semiconductor Corporation 

13 

FEBFDMQ8203_90W  •  Rev. 1.0.1 

8.

 

Bill of Materials 

# Qty. 

Reference 

Part 

Name 

Vendor 

Comment 

1 8 

C1,C2,C3,C4,C5,C6,C

7,C8 

1 nF / 1005 

Any 

1 nF / 50 V / 1005 

2 8 

C9,D11,C17,C18, 

R21,R25,R40,Q50 

NC  

 

3 1 

C10 

C2012X7R2A104K 

TDK 

0.1 µF / 100 V / 

2012 

C11 

VJ0805Y563KXBAT 

Vishay 

56 nF 100 V / 2012 

C12 

63SXV33M 

Sanyo 

33 µF / 63 V / Alu 

C13,C36 

CL32A106KLULNNE 

SAMSUNG 

10µF / 35 V / 3225 

C14 

10 nF / 50 V 

Any 

10 nF / 50 V / 1608 

C15 

1 µF / 50 V 

Any 

1 µF / 50 V / 1608 

C16,C32 

0.1 µF / 50 V 

Any 

0.1 µF / 50 V / 1608

10 3 

C19,C20,C21  GRM32ER72A225KA35L 

MURATA 

2.2 µF / 100 V / 

3225 

11 

C22,C23 

GRM32ER61C476ME15L 

MURATA 

47  µF /16V/3225 

12 

C24 

330 pF / 50 V 

Any 

330 pF / 50 V / 1608

13 3 

C25,C26,C27 

T520D337M006ATE010 

Kemet 

330 µF / 6.3 V / 

Tantalum 

14 

C28,C29,C30,C33 

C3216X5R0J226M 

TDK 

22  µF /6.3V/3216 

15 

C31 

100 pF / 50 V 

Any 

100 pF / 50 V / 1608

16 

C34 

82 nF / 50 V 

Any 

82 nF /50 V / 1608 

17 2 

C35,C38 

C0805C224K1RACTU 

Kemet 

220 nF /100 V / 

2012 

18 

C37 

GRM31CR72E473KW03L 

MURATA 

47 nF /250 V / 3210

19 8 

DZ1,DZ2,DZ3,DZ4,DZ

5,DZ6,DZ7,DZ8 

MM5Z10V 

Fairchild Semiconductor 

10 V Zener Diode 

20 8 

D1,D2,D3,D4,D5,D6,D

7,D8 

BAS516 NXP 

Semiconductors 

SW 75 V 250 mA 

HS 

21 1 

D9 

SMAJ58A 

Diodes 

TVS 

diode 

22 4  D10,D12,D15,D16 

BAT54 

Fairchild 

Semiconductor 

BAT54 

23 2 

D13,D14 

1N4148WS 

Fairchild 

Semiconductor  1N4148WS 

24 1 

D17 

S310 

Fairchild 

Semiconductor 

S310 

25 1 

J1 

7499511611A 

Wurth 

Electronics 

RJ45 w/ 

Transformer 

26 9 

J2,J3,J4,J5,J6,J7,J8,J

9,J10,J11 

Test Pin 

Any 

3 mm 

27 2 

Q1,Q2 

FDMQ8203 

Fairchild 

Semiconductor 

GreenBridge™ 

Quad MOSFET 

28 4 

Q3,Q4,Q5,Q6 

BC846BPDW1T1G ON 

Semiconductor 

80 V Dual 

Complementary 

29 1 

Q7 

FDMC86102 

Fairchild 

Semiconductor 

100 V 24 m

 

MOSFET 

30 1 

Q8 

FDMS86200 

Fairchild 

Semiconductor 

150 V 18 m

 

MOSFET 

31 4  Q9,Q10,Q11,Q12 

FDMS8025S 

Fairchild 

Semiconductor 

30 V 2.8 m

 

MOSFET 

Содержание GreenBridge FDMQ8203

Страница 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Страница 2: ...or Power Over Ethernet 90 W Active Clamp Forward DC DC Converter MLP 4 5x5 GreenBridge Power 33 56 Shielded Gate PowerTrench MOSFET Featured Fairchild Products FDMQ8203 FDMS86200 FDMS8025S FDMC2523P D...

Страница 3: ...s 1 Introduction 3 1 1 Description 3 2 General Evaluation Board Specifications 4 3 Photographs 5 4 Setup and Test Procedure 6 4 1 Hardware Connector Description 6 5 Performance of Evaluation Board 7 6...

Страница 4: ...system is composed with four pair architecture which PSE uses to deliver data and power to the PD through both the spare pair and data pair in the network cable at the same time 1 1 Description Green...

Страница 5: ...ard Specifications Table 2 Summary of Features and Performance Description Value Remark Input Voltage Range 42 57 VIN IEEE802 3 at Standard Output Voltage Range 3 3 VOUT Adjustable by R22 and R46 Swit...

Страница 6: ...2013 Fairchild Semiconductor Corporation 5 FEBFDMQ8203_90W Rev 1 0 1 3 Photographs Figure 2 Top Side View of Evaluation Kit Figure 3 Bottom Side View of Evaluation Kit...

Страница 7: ...verify board operation 1 Use one of the following methods to power the evaluation kit If network connectivity is required Connect a network cable from the evaluation kit input port RJ45 connector to...

Страница 8: ...n board when operated under the conditions in Table 4 This board is optimized for 3 3 VOUT 300 kHz fSW and peak 27 A IOUT specifications Table 4 Test Conditions VIN VOUT fSW IOUT Cooling 42 57 V 3 3 V...

Страница 9: ...rmance Comparison GreenBridge vs Diode Bridge at VOUT 3 3 fSW 300 kHz Soaking 3 Minutes TA 25 C Figure 8 Top Side Thermal Data at VIN 48 V VOUT 3 3 IOUT 27 A fSW 300 kHz Soaking 10 Minutes TA 25 C Gre...

Страница 10: ...BFDMQ8203_90W Rev 1 0 1 S210 Diode Bridge FDMQ8203 GreenBridge 42 VIN 89 6 C 63 0 C 48 VIN 83 8 C 58 3 C 57 VIN 77 0 C 55 2 C Figure 9 Thermal Image Comparison GreenBridge vs Diode Bridge VOUT 3 3 V I...

Страница 11: ...DMQ8203_90W Rev 1 0 1 6 Printed Circuit Board PCB layout 100 mm x 70 mm 4 Layer FR 4 Figure 10 SST Top Side Layer Figure 11 SSB Bottom Side Layer Figure 12 TOP SMT Layer Figure 13 BOT SMB Layer Figure...

Страница 12: ...HY 1 7 8 D9 SMAJ58A 6 C9 NC Q6 BC846 1 2 3 4 5 6 R10 0 Q4 BC846 1 2 3 4 5 6 J1 7499511611A TRCT3 1 TRD3 2 TRD3 3 TRD2 4 TRD2 5 TRCT2 6 TRCT4 7 TRD4 8 TRD4 9 TRD1 10 TRCT1 12 TRD1 11 TXCT 13 RXCT 14 MI...

Страница 13: ...8 2k Z1 MMSZ5231B 5 1Vz 1 2 C17 NC C18 NC C19 2 2uF 100V Q9 FDMS8025S C20 2 2uF 100V C21 2 2uF 100V Q54 FDMC2523P S 1 S 2 S 3 G 4 D 7 D 6 D 5 D 8 D 9 Q10 FDMS8025S T1 P8208 1 3 7 8 Q11 FDMS8025S T2 P...

Страница 14: ...V 3216 15 1 C31 100 pF 50 V Any 100 pF 50 V 1608 16 1 C34 82 nF 50 V Any 82 nF 50 V 1608 17 2 C35 C38 C0805C224K1RACTU Kemet 220 nF 100 V 2012 18 1 C37 GRM31CR72E473KW03L MURATA 47 nF 250 V 3210 19 8...

Страница 15: ...8 47 1 R24 10 k 1608 Any 10 k 1608 48 1 R26 12 1608 Any 12 1608 49 1 R27 68 k 1608 Any 68 k 1608 50 1 R28 12 k 1608 Any 12 k 1608 51 1 R29 75 k 1608 Any 75 k 1608 52 1 R30 56 k 1608 Any 56 k 1608 53 1...

Страница 16: ...cted to result in significant injury to the user 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of...

Страница 17: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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