background image

FSD210, FSD200

13

2. Demo Circuit Part List

3. Transformer Schematic Diagram

4. Winding Specification

5. Electrical Characteristics

TO-92 Type, LM431

Vref=2.495V(Typ.)

1

KA431AZ

U2

Iover=0.3A, Fairchildsemi

0.5A/700V

1

FSD210

(FSD200)

U1

-

CTR 80~160%

1

H11A817A

U3

DO41 Type

1A/1000V  Ultra Fast Diode

1

UF4007

D5

D0-213 Type

10mA/100V Junction Diode

1

1N4148

D6

D0-41 Type

2A/60V Schottky Diode

1

SB260

D7 

1

4

Quantity

Ic=600mA, Vce=30V

1A/1000V  Junction Rectifier

Description

TO-92 Type

KSP2222A

Q1

DO41 Type

1N4007

D1,D2,D3,D4

Requirement/Comment

Part #

Reference

TO-92 Type, LM431

Vref=2.495V(Typ.)

1

KA431AZ

U2

Iover=0.3A, Fairchildsemi

0.5A/700V

1

FSD210

(FSD200)

U1

-

CTR 80~160%

1

H11A817A

U3

DO41 Type

1A/1000V  Ultra Fast Diode

1

UF4007

D5

D0-213 Type

10mA/100V Junction Diode

1

1N4148

D6

D0-41 Type

2A/60V Schottky Diode

1

SB260

D7 

1

4

Quantity

Ic=600mA, Vce=30V

1A/1000V  Junction Rectifier

Description

TO-92 Type

KSP2222A

Q1

DO41 Type

1N4007

D1,D2,D3,D4

Requirement/Comment

Part #

Reference

CORE :   EE1616
BOBBIN : EE1616(H)

W 4

W 3

W 2

W 1

2mm

2mm

W 4

W 3

W 2

W 1

2mm

2mm

1

1

1

1

2

2

2

2

3

3

3

3

4

4

4

4

8

8

8

8

7

7

7

7

6

6

6

6

5

5

5

5

1

1

1

1

2

2

2

2

3

3

3

3

4

4

4

4

8

8

8

8

7

7

7

7

6

6

6

6

5

5

5

5

.

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 3Ts

SOLENOID WINDING

9 Ts

0.40

Φ Χ

1

7

W4

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 3Ts

SOLENOID WINDING

50 Ts

0.16

Φ Χ

1

open

W3

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 2Ts

CENTER SOLENOID 

WINDING

18 Ts

0.16

Φ Χ

1

3

W2

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 2Ts

SOLENOID WINDING

99 Ts

0.16

Φ Χ

1

2

W1

Winding Method

Winding Method

Turns

Turns

Wire

Wire

Pin (S 

Pin (S 

F)

F)

No.

No.

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 3Ts

SOLENOID WINDING

9 Ts

0.40

Φ Χ

1

7

W4

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 3Ts

SOLENOID WINDING

50 Ts

0.16

Φ Χ

1

open

W3

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 2Ts

CENTER SOLENOID 

WINDING

18 Ts

0.16

Φ Χ

1

3

W2

INSULATION : POLYESTER TAPE t=0.025mm / 10mm, 2Ts

SOLENOID WINDING

99 Ts

0.16

Φ Χ

1

2

W1

Winding Method

Winding Method

Turns

Turns

Wire

Wire

Pin (S 

Pin (S 

F)

F)

No.

No.

3,4,7,8 short 

100kHz, 1V

50uH

1 – 2

LEAKAGE L

1kHz, 1V

1.6mH

1 – 2

INDUCTANCE

REM ARKS

REM ARKS

SPECIFICAT ION

SPECIFICAT ION

TERM INAL

TERM INAL

IT EM

IT EM

3,4,7,8 short 

100kHz, 1V

50uH

1 – 2

LEAKAGE L

1kHz, 1V

1.6mH

1 – 2

INDUCTANCE

REM ARKS

REM ARKS

SPECIFICAT ION

SPECIFICAT ION

TERM INAL

TERM INAL

IT EM

IT EM

3,4,7,8 short 

100kHz, 1V

50uH

1 – 2

LEAKAGE L

1kHz, 1V

1.6mH

1 – 2

INDUCTANCE

REM ARKS

REM ARKS

SPECIFICAT ION

SPECIFICAT ION

TERM INAL

TERM INAL

IT EM

IT EM

3,4,7,8 short 

100kHz, 1V

50uH

1 – 2

LEAKAGE L

1kHz, 1V

1.6mH

1 – 2

INDUCTANCE

REM ARKS

REM ARKS

SPECIFICAT ION

SPECIFICAT ION

TERM INAL

TERM INAL

IT EM

IT EM

Содержание FSD210

Страница 1: ...Out UVLO protection Leading Edge Blanking LEB optimized gate turn on turn off driver thermal shut down protection TSD temperature compensated precision current sources for loop compensa tion and fault protection circuitry When compared to a dis crete MOSFET and controller or RCC switching converter solution the FSD200 and FSD210 reduce total component count design size weight and at the same time ...

Страница 2: ...tr Vcc Internal Bias L Rsense Iover S S 3mS 4 1 2 3 7 OSC S R Q TSD S R Q LEB OLP Reset A R DRIVER Frequency Modulation 5uA 250uA Vck Vth SFET Drain GND Vfb BURST VSD VBURST 8 7 6 7V Rsense Iover S S 3mS 4 1 2 3 7 OSC S R Q TSD S R Q LEB OLP Reset A R DRIVER Frequency Modulation 5uA 250uA Vck Vth SFET Drain GND Vfb BURST VSD VBURST 7V 8 5 UVLO Voltage Ref HV REG INTERNAL BIAS ON OFF Vstr Vcc ...

Страница 3: ...l Vcc reaches the UVLO upper threshold 8 7V that the internal start up switch opens and device power is supplied via the auxiliary transformer winding FSD200 This pin is connected to a storage capacitor A high voltage regulator connected between pin 8 Vstr and this pin provides the supply voltage to the FSD200 at startup and when switching during normal operation The FSD200 eliminates the need for...

Страница 4: ...t Maximum Supply Voltage FSD200 VCC MAX 10 V Maximum Supply Voltage FSD210 VCC MAX 20 V Input Voltage Range VFB 0 3 to VSTOP V Operating Junction Temperature TJ 150 C Operating Ambient Temperature TA 25 to 85 C Storage Temperature Range TSTG 55 to 150 C Parameter Symbol Value Unit 7DIP Junction to Ambient Thermal θJA 1 74 07 3 C W θJA 1 60 44 4 C W Junction to Case Thermal θJC 2 22 00 C W 7LSOP Ju...

Страница 5: ...65 70 Minimum Duty Cycle DMIN Vfb 0V 0 0 0 UVLO Threshold Voltage FSD200 VSTART 6 3 7 7 7 V VSTOP After turn on 5 3 6 6 7 V UVLO Threshold Voltage FSD210 VSTART 8 0 8 7 9 4 V VSTOP After turn on 6 0 6 7 7 4 V Supply Shunt Regulator FSD200 VCCREG 7 V Internal Soft Start Time TS S 3 ms BURST MODE SECTION Burst Mode Voltage VBURH Tj 25 C 0 58 0 64 0 7 V VBURL 0 5 0 58 0 64 V Hysteresis 60 mV PROTECTI...

Страница 6: ...t start in most applications Reduces or eliminates output overshoot Switching Frequency 100kHz 134kHz Smaller transformer Frequency Modulation not applicable 4kHz Reduced conducted EMI Burst Mode Operation not applicable Yes built into controller Improve light load efficiency Reduces no load consumption Transformer audible noise reduction Drain Creepage at Package 1 02mm 3 56mm DIP 3 56mm LSOP Gre...

Страница 7: ...perature Feedback SOurce Current A 0 0 0 2 0 4 0 6 0 8 1 0 1 2 25 0 25 50 75 100 125 Junction Temperature Peak Current Limit A 0 0 0 2 0 4 0 6 0 8 1 0 1 2 25 0 25 50 75 100 125 Junction Temperature Operating Current A 0 0 0 2 0 4 0 6 0 8 1 0 1 2 25 0 25 50 75 100 125 Junction Temperature Fosc kHz 0 00 0 20 0 40 0 60 0 80 1 00 1 20 25 0 25 50 75 100 125 Junction Temperature Vstart V 0 00 0 20 0 40 ...

Страница 8: ... 100 125 Junction Temperature On State Resistance Ω 0 0 0 2 0 4 0 6 0 8 1 0 1 2 25 0 25 50 75 100 125 Junction Temperature BVdss V 0 0 0 2 0 4 0 6 0 8 1 0 1 2 25 0 25 50 75 100 125 Junction Temperature VSD V Vcc Regulation Voltage vs Temp for FSD200 Shutdown Feedback Voltage vs Temp Start Up Current vs Temp for FSD210 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 25 0 25 50 75 100 125 Junction Temperature Istar...

Страница 9: ...ck voltage is compared with an internally generated sawtooth waveform directly controlling the duty cycle When the KA431 reference pin voltage exceeds the internal reference voltage of 2 5V the optocoupler LED current increases pulling down the feedback voltage and reducing the duty cycle This event will occur when either the input voltage increases or the output load decreases Figure 7 Charging t...

Страница 10: ... 3V Once Vfb reaches 3V the device switches at maximum power the 250uA current source is blocked and the 5uA source continues to charge Cfb Once Vfb reaches 4V switching stops and overload protection is triggered The resultant shutdown delay time is set by the time required to charge Cfb from 3Vto 4Vwith 5uA as shown in Fig 10 4 2 Thermal Shutdown TSD The Sense FET and the control IC are integrate...

Страница 11: ...ation allows the use of a cost effective inductor instead of an AC input mode choke to satisfy the requirements of world wide EMI limits Figure 14 Frequency Modulation Waveforms Figure 15 FSDH0165 Full Range EMI scan 100kHz no Frequency Modulation with charger set Figure 16 FSD210 Full Range EMI scan 134kHz with Fre quency Modulation with charger set OSC 4 Vfb S R Q GATE DRIVER 5uA 250uA 0 64V 0 5...

Страница 12: ...increases This reduces the feedback voltage and duty ratio Therefore the output voltage decreases and the output current is regulated The NTC negative thermal coefficient is used to compensate the temperature characteristics of the transistor Q1 1 Schematic Application Output power Input voltage Output voltage Max current Cellular Phone Charger 3 38W Universal input 85 265Vac 5 2V 650mA For FSD21x...

Страница 13: ... t 0 025mm 10mm 3Ts SOLENOID WINDING 9 Ts 0 40Φ Χ 1 8 7 W4 INSULATION POLYESTER TAPE t 0 025mm 10mm 3Ts SOLENOID WINDING 50 Ts 0 16Φ Χ 1 1 open W3 INSULATION POLYESTER TAPE t 0 025mm 10mm 2Ts CENTER SOLENOID WINDING 18 Ts 0 16Φ Χ 1 4 3 W2 INSULATION POLYESTER TAPE t 0 025mm 10mm 2Ts SOLENOID WINDING 99 Ts 0 16Φ Χ 1 1 2 W1 Winding Method Winding Method Turns Turns Wire Wire Pin S Pin S F F No No IN...

Страница 14: ... 8 2K is a dummy resistor to regulate output voltage in light load 1 Schematic 2 Demo Circuit Part List Application Output power Input voltage Output voltage Max current Non Isolation Buck 1 2W Universal dc input 100 375Vac 12V 100mA R 680K R2 110 0 C1 4 7uF 400V R 8 2K R3 750 D3 ZD 1N759A GND Q1 KSP2222A C4 1000uF 16V C2 47nF 50V GND R1 110 U1 FSD21x 8 5 7 1 4 2 3 Vstr Vcc Drain GND Vfb GND GND C...

Страница 15: ...FSD210 FSD200 15 Layout Considerations for Flyback Convertor Figure 17 Layout Considerations for FSD2x0 using 7DIP 1 GND 2 GND 3 GND 4 Vfb 5 Vcc 6 N C 7 Drain 8 Vstr Copper area for heatsink ...

Страница 16: ...FSD210 FSD200 16 Package Dimensions 7 DIP ...

Страница 17: ...FSD210 FSD200 17 Package Dimensions Continued 7 LSOP ...

Страница 18: ... of the user 2 A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness www fairchildsemi com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY ...

Страница 19: ...This datasheet has been download from www datasheetcatalog com Datasheets for electronics components ...

Отзывы: