Fairchild FEBFAN7688SJXA_CP14U306, Руководство пользователя

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© 2015 Fairchild Semiconductor Corporation 27 FEBFAN7688SJXA_CP14U306
• Rev. 1.1
9.10. Surge & ESD
L-PE ±3k V N-PE ±3k V L-N ±1k V AIR ±16k V Contact ±8k V
Pass Pass Pass Pass Pass
9.11. EMI Conduction
Test Condition:
EMI conduction test in 100% Load.
Test Results:
115 V / 60 Hz CONDUCTION-L 115 V / 60 Hz CONDUCTION-N
230 V / 50 Hz CONDUCTION-L 230 V / 50 Hz CONDUCTION-N
Figure 23. Test Waveform of EMI
Figure 24 shows, this EVB is design and test with the metal case. If the user wants to
perform an EMI conduction test, connect power earth (PE) to secondary ground point and
flowing point of Y-cap C9.
Figure 24. Setting of EMI Test
1 P K
C L R W R
2 A V
C L R W R
T D F
6 D B
d B µ V d B µ V
1 5 0 k H z 3 0 M H z
M T 1 0 m s
R B W 9 k H z
P R E A M P O F F A t t 1 0 d B
P R N
1 M H z 1 0 M H z
0
10
20
30
40
50
60
70
80
90
100
E N 5 5 0 2 2 A
E N 5 5 0 2 2 Q
D a t e : 1 7 . M A R . 2 0 1 5 1 6 : 3 5 : 1 1
1 P K
C L R W R
2 A V
C L R W R
T D F
6 D B
d B µ V d B µ V
1 5 0 k H z 3 0 M H z
M T 1 0 m s
R B W 9 k H z
P R E A M P O F F A t t 1 0 d B
P R N
1 M H z 1 0 M H z
0
10
20
30
40
50
60
70
80
90
100
E N 5 5 0 2 2 A
E N 5 5 0 2 2 Q
D a t e : 1 7 . M A R . 2 0 1 5 1 6 : 3 2 : 0 5
1 P K
C L R W R
2 A V
C L R W R
T D F
6 D B
d B µ V d B µ V
1 5 0 k H z 3 0 M H z
M T 1 0 m s
R B W 9 k H z
P R E A M P O F F A t t 1 0 d B
P R N
1 M H z 1 0 M H z
0
10
20
30
40
50
60
70
80
90
100
E N 5 5 0 2 2 A
E N 5 5 0 2 2 Q
D a t e : 1 7 . M A R . 2 0 1 5 1 6 : 3 7 : 2 7
1 P K
C L R W R
2 A V
C L R W R
T D F
6 D B
d B µ V d B µ V
1 5 0 k H z 3 0 M H z
M T 1 0 m s
R B W 9 k H z
P R E A M P O F F A t t 1 0 d B
P R N
1 M H z 1 0 M H z
0
10
20
30
40
50
60
70
80
90
100
E N 5 5 0 2 2 A
E N 5 5 0 2 2 Q
D a t e : 1 7 . M A R . 2 0 1 5 1 6 : 3 9 : 3 1
PE