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EPC9079
THERMAL CONSIDERATIONS
The EPC9079 development board showcases the EPC2046 eGaN FET. The
EPC9079 is intended for bench evaluation with typical room ambient
temperature. The addition of heat-sinking and forced air cooling can
significantly increase the current capability of these devices, but care
must be taken to not exceed the absolute maximum die temperature
of 150° C.
NOTE. The EPC9079 development board does not have any current or thermal
protection on board.
For more information regarding the thermal performance of EPC eGaN FETs, please
consult:
D. Reusch and J. Glaser,
DC-DC Converter Handbook
, a supplement to
GaN Transistors for
Efficient Power Conversion
, First Edition, Power Conversion Publications, 2015.
Table 2: Bill of Materials
Item
Qty
Reference
Part Description
Manufacturer / Part #
1
5
C1, C2, C3, C10, C11
Capacitor, 1 µF, 10%, 25 V, X5R
Murata, GRM188R61E105KA12D
2
1
C6
Capacitor, 100 pF, 5%, 50 V, NP0
TDK, CGA3E2C0G1H101J080AA
3
4
C8, C9, C12, C13
Capacitor, 0.22 µF, 16%, 25 V, X7R
TDK, C1005X7R1C224K050BC
4
4
C16, C17, C18, C19
Capacitor, 0.1 µF, 10%, 250 V, X7T
TDK, C2012X7T2E104K125AA
5
1
C41
Capacitor, 10 pF, 5%, 50 V, NP0
Kemet, C0402C100J5GACTU
6
1
C42
Capacitor, 100 pF, 5%, 50 V, NP0
TDK, C1005C0G1H101J050BA
7
10
C60, C61, C62, C63, C64, C65,
C66, C67, C68, C69
Capacitor, 0.22 µF, 10%, 250 V, X7T
TDK, C3216X7T2E224K160AA
8
2
D1, D2
Schottky Diode, 30 V, 30 mA
Diodes Inc., SDM03U40-7
9
1
D3
Diode, 200 V, 1 A
Diodes Inc., DFLS1200
10
2
D4, D5
Diode, 40 V, 200 mA
Diodes Inc., BAS40LP-7
11
2
D6, D7
Diode, 5.61 V, 500 mW
On Semiconductor, MM5Z5V6ST1G
12
3
FD1, FD2, FD3
SML Fiductial
N/A
13
1
GP1
Connector, .1" Male Vert.
Wurth, 61300111121
14
2
J1, SWP1
Connector, .1" Male Vert.
Wurth, 61300211121
15
1
J2
Connector, .1" Male Vert.
4 pins of Tyco, 4-103185-0-04
16
1
J3, J4, J5, J6, J7, J8
Connector, .1" Male Vert.
4 pins of FCI, 68602-224HLF
17
2
J21, J22
Connector, MMCX SMD
Molex, 0734152063
18
2
Q1, Q2
eGaN® FET, 200 V, 25 mΩ
EPC, EPC2046
19
1
R1
Resistor, 10.0 K, 1%, 1/10 W
Stackpole, RMCF0603FT10K0
20
2
R2, R3
Resistor, 0 Ω, 1/10 W
Panasonic, ERJ-3GEY0R00V
21
1
R4
Resistor, 100 Ω, 1%, 1/10 W
Stackpole, RMCF0603FT100R
22
1
R5
Resistor, 470 Ω, 1%, 1/10 W
Stackpole, RMCF0603FT470R
23
4
R6
Resistor, 0 Ω, 1/10 W
Panasonic, ERJ-2GE0R00X
24
2
R11, R12
Resistor, 1 Ω, 1%, 1/16 W
Stackpole, RMCF0402FT1R00
25
2
R21, R22
Resistor, 0 Ω, 1/16 W
Stackpole, RMCF0402ZT0R00
26
2
TP1, TP2
Test Point
Keystone Elect, 5015
27
1
U1
IC, Logic
Fairchild, NC7SZ00L6X
28
1
U2
IC, Opto-coupler
Silicon Labs, Si8610BC
29
1
U4
IC, Logic
Fairchild, NC7SZ08L6X
30
2
U6, U7
IC, Gate driver
Texas Instruments, UCC27611
31
0
P1, P2
Optional potentiometer
32
0
R14, R15
Optional resistor
33
0
U5
Optional IC