Dectris PILATUS 3 R 100K-M, Технические характеристики, Страница: 9 / 39

3. TECHNICAL SPECIFICATIONS
3.1. Specifications
3.1.1. Quantum Efficiency
Table 3.1: Quantum Efficiency
Sensor thickness
1
450 µm 1000 µm
Quantum efficiency at 5.4 keV (Cr) 94 % > 80 %
8.0 keV (Cu) 98 % 96 %
17.5 keV (Mo) 47 % 76 %
3.1.2. Detector
Table 3.2:
Technical Specifications
Number of modules (W x H) 1 x 1 = 1
Sensor Reverse-biased diode array
Sensor material Silicon (Si)
Pixel size (W x H) 172 µm x 172 µm
Module size (W x H) 83.8 mm x 33.5 mm
Pixel array format (W x H) 487 pixels x 195 pixels = 94 965 pixels
Intermodule gap [pixel] hor. -, vert. -
Image bit depth 32 bit
Readout bit depth 20 bit
Counter overflow state 1 048 575
Maximum count rate 1
×
10
7
photons/s/pixel
Energy range
2
4.5 keV to 36 keV
Adjustable threshold range
2
2.7 keV to 18 keV
Number of thresholds 1
Maximum frame rate 20 Hz
Information #1
When using the external trigger or external enable
mode, the detector will not acquire an image if the ef-
fective frame rate is above 20 Hz.
1
The sensor thickness of your actual system can be found in the order confirmation and in the file header of recorded images
2
Extended low energy and ultra low energy calibrations offering lower minimal thresholds (1.9 keV and 1.6 keV respectively) are optionally available. The
energy calibration of your actual system can be found in the order confirmation and in the factory acceptance test sheet. Please read carefully the ”Low
Energy Calibration” technical specification add-on before using thresholds lower than 2.7 keV.
PILATUS3 R 100K-M Technical Specifications v1.2.2 4 | 34