24LC08B (EEPROM)
(1) Features
(2) General Description
The Microchip Technology Inc. 24LC08B is a 8K-bit Electrically Erasable PROM.
The device is organized as four blocks of 256x9bit memory with a two wire serial interface. Low voltage
design permits operation down to 2.5 volts with standby and active currents of only 5 A and 1mA respectively.
The 24LC08B also has a page-write capability for up to 16 bytes of data.
The 24L08B is available in the standard 8-pin DIP surface mount 80IC packages.
(3) Block Diagram
(4) Pin Description
PIN
SYMBOL
DESCRIPTION
1-3
A0, A1, A2
Device Address lnputs
4
Vss
Ground
5
SDA
Serial Data/Address
6
SCL
Serial Clock
7
WP
8
Vcc
+5V Power supply
13
WP
SDA
SCL
V
CC
V
SS
I/O
CONTROL
LOGIC
MEMORY
CONTROL
LOGIC
XDEC
EEPROM ARRAY
(4X256X8)
PAGE LATCHES
SENSE AMP
R/W CONTROL
HV GENERATOR
YDEC
• Single supply with operation down to 2.5V
• Low power CMOS technology
- 1mA active current typical
- 10 A standby current typical at 5.5V
- 5 A standby current typical at 3.0V
• Organized as two or four blocks of 256 bytes
(2x256x8) and (4x256x8)
• Two wire serial interface bus, I
2
C
TM
compatible
• Schmitt trigger, filtered inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100KHz(2.5V) and 400KHz(5V) compatibility
• Self-timed write cycle(including auto-erase)
• Page-write buffer for up to 16 bytes
• 2ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• Factory programming(QTP) available
• ESD protection > 4,000V
• 1,000,000 ERASE/WRITE cycles(typical)
• Data retention > 40 years
• 8-pin DIP, 8-lead or 14-lead SOIC packages
• Available for extended temperature ranges
- Commercial : 0 C to +70 C
-Industrial : -40 C to +85 C
Содержание DTR-14D3VG
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