Daewoo DTE-29G3ZZR, Руководство по обслуживанию, Страница: 61 / 68

Appendix Service manual CP-795
- 36 -
C
When the MOSFET is ON, the STR-F6653 internal capacitor C1 is charged at the constant voltage
6.5V.
At the same time, the voltage at pin 1 (OCP / FB) increases with the same waveform as the MOSFET
drain current.
D
When the pin 1 voltage reaches the threshold voltage V
TH1
= 0.73V, the STR-F6653 internal
comparator 1 starts operating. The STR-F6653 internal oscillator is inverted and the MOSFET turns OFF.
E
When the MOSFET turns OFF, charging of STR-F6653 internal capacitor C1 is released and C1
starts discharging by the STR-F6653 internal resistance R1. So, C1 voltage starts falling in accordance
with the gradient regulated by the constant discharging time of C1 and R1. So, this means that the fixed
time determined by C1 and R1 is the OFF-time of the MOSFET.
F
When C1 voltage falls to around 3.7V, the STR-F6653 internal oscillator is reversed again and the
MOSFET turns ON. C1 is quickly charged to around 6.5V
The MOSFET continues to oscillate by repeating the above procedure.
2-8 -2-3 STR-F6653 protection circuits
•
overcurrent protection function (OCP)
Overcurrent protection is performed pulse by pulse detecting at STR-F6653 pin 1 (OCP) the peak of the
MOSFET drain current in every pulse.
•
latch circuit
This circuit sustains an output low from the STR-F6653 internal oscillator and stops operation of the
power supply when overvoltage protection (OVP) and thermal shutdown (TSD) circuit are under
operation
•
thermal shutdown circuit (TSD)
This circuit triggers the latch circuit when the frame temperature of STR-F6653 IC exceeds 140
°
C
•
overvoltage protection circuit (OVP)
This circuit triggers the latch circuit when the V
in
voltage exceeds 22V (typ.)