30
Component Descriptions
* Features
• 5.0V
±
40% for read and write operations
• Access time –70max
• Current
–20 mA typical active read current
–30 mA typical program/erase current
–1µA typical CMOS Standby
• Flexible sector architecture
– 8 uniform sectors of 64 Kbyte each
– Any combination of sectors can be erased
– Supports full chip erase
– Sector protection
• Embedded Erase Algorithms
• Typical 100,000 program/erase cycles per sector
• Compatible with FEDEC-standards
* Pin Configurations
2-1-9 4-Megabit (512K x 8) FLASH (A29040)
Содержание DHC - 2300K
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Страница 79: ...79 TaeYoung Telstar Co Ltd May 2001 Printed in Korea ...