DAEWOO ELECTRONICS DG-K511S, Руководство по обслуживанию

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CIRCUIT OPERATIONAL DESCRIPTION
2) Flash Memory : ES29LV60DB-70TG
Description
The ES29LV60 is a 6 megabit, 3.0 volt-only flashmemory device, organized as 2M
x 8 bits (Bytemode) or M x 6 bits (Word mode) which is config-urable by BYTE#.
Four boot sectors and thirty onemain sectors are provided : 6Kbytes x , 8Kbytesx
2, 32Kbytes x and 64Kbytes x 3. The device ismanufactured with ESI’s proprietary,
high performance and highly reliable 0.8um CMOS flashtechnology. The device can be
programmed orerased in-system with standard 3.0 Volt Vcc supply( 2.7V-3.6V) and can
also be programmed in stan-dard EPROM programmers. The device offers min-imum
endurance of 00,000 program/erase cyclesand more than 0 years of data retention.
The ES29LV60 offers access time as fast as 70nsor 90ns, allowing operation of high-
speed microprocessors without wait states. Three separate controlpins are provided
to eliminate bus contention : chipenable (CE#), write enable (WE#) and outputenable
(OE#).
All program and erase operation are automaticallyand internally performed and con-
trolled by embed-ded program/erase algorithms built in the device.The device automati-
cally generates and times thenecessary high-voltage pulses to be applied to thecells,
performs the verification, and counts the number of sequences. Some status bits (DQ7,
DQ6 andDQ5) read by data# polling or toggling betweenconsecutive read cycles pro-
vide to the users theinternal status of program/erase operation: whetherit is successfully
done or still being progressed.
The ES29LV60 is completely compatible with theJEDEC standard command set of sin-
gle power sup-ply Flash. Commands are written to the internalcommand register using
standard write timings ofmicroprocessor and data can be read out from thecell array in
the device with the same way as used inother EPROM or flash devices.
Sm(DAEWOO_DG-K511S)060115.indd 8 2006-1-16 15:30:51