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CY62137EV30

MoBL

®

Document #: 38-05443 Rev. *B

Page 5 of 12

 

Switching Characteristics 

Over the Operating Range

[11]

Parameter

Description

45 ns

Unit

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

45

ns

t

AA

Address to Data Valid

45

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE LOW to Data Valid

45

ns

t

DOE

OE LOW to Data Valid

22

ns

t

LZOE

OE LOW to LOW Z

[12]

5

ns

t

HZOE

OE HIGH to High Z

[12, 13]

18

ns

t

LZCE

CE LOW to Low Z

[12]

10

ns

t

HZCE

CE HIGH to High Z

[12, 13]

18

ns

t

PU

CE LOW to Power-Up

0

ns

t

PD

CE HIGH to Power-Down

45

ns

t

DBE

BLE/BHE LOW to Data Valid

45

ns

t

LZBE

BLE/BHE LOW to Low Z

[12]

5

ns

t

HZBE

BLE/BHE HIGH to HIGH Z

[12, 13]

18

ns

Write Cycle

[14]

t

WC

Write Cycle Time

45

ns

t

SCE

CE LOW to Write End

35

ns

t

AW

Address Set-Up to Write End

35

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Set-Up to Write Start

0

ns

t

PWE

WE Pulse Width

35

ns

t

BW

BLE/BHE LOW to Write End

35

ns

t

SD

Data Set-Up to Write End

25

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High-Z

[12, 13]

18

ns

t

LZWE

WE HIGH to Low-Z

[12]

10

ns

Notes: 

10. BHE.BLE is the AND of both BHE and BLE. The chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of V

CC(typ)

/2, input 

pulse levels of 0 to V

CC(typ.)

, and output loading of the specified I

OL

/I

OH

 as shown in the “AC Test Loads and Waveforms” section.

12. At any given temperature and voltage condition, t

HZCE

 is less than t

LZCE

, t

HZBE

 is less than t

LZBE

, t

HZOE

 is less than t

LZOE

, and t

HZWE

 is less than t

LZWE

 for any 

given device.

13. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

 transitions are measured when the outputs enter a high- impedance state.

14. The internal Write time of the memory is defined by the overlap of WE, CE

 

= V

IL

, BHE and/or BLE = V

IL

. All signals must be ACTIVE to initiate a write and any 

of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates 
the write. 

[+] Feedback 

Содержание CY62137EV30

Страница 1: ...edance state when deselected CE HIGH outputs are disabled OE HIGH both Byte High Enable and Byte Low Enable are disabled BHE BLE HIGH or during a write operation CE LOW and WE LOW Writing to the device is accomplished by asserting Chip En able CE and Write Enable WE inputs LOW If Byte Low Enable BLE is LOW then data from I O pins I O0 through I O7 is written into the location specified on the addr...

Страница 2: ... are address expansion pins for 4 Mb 8 Mb 16 Mb and 32 Mb respectively WE A11 A10 A6 A0 A3 CE I O10 I O8 I O9 A4 A5 I O11 I O13 I O12 I O14 I O15 VSS A9 A8 OE Vss A7 I O0 BHE NC NC A2 A1 BLE VCC I O2 I O1 I O3 I O4 I O5 I O6 I O7 A15 A14 A13 A12 NC NC NC 3 2 6 5 4 1 D E B A C F G H A16 NC Vcc WE 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 35 34 33 37 40 39 38 12 13 41 44 43 42 16 15 29 30 VCC A16 A15 A14 ...

Страница 3: ...OL 0 1 mA VCC 2 20V 0 4 V IOL 2 1mA VCC 2 70V 0 4 V VIH Input HIGH Voltage VCC 2 2V to 2 7V 1 8 VCC 0 3 V VCC 2 7V to 3 6V 2 2 VCC 0 3 V VIL Input LOW Voltage VCC 2 2V to 2 7V 0 3 0 6 V VCC 2 7V to 3 6V 0 3 0 8 V IIX Input Leakage Current GND VI VCC 1 1 µA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 µA ICC VCC Operating Supply Current f fMAX 1 tRC VCC VCCmax IOUT 0 mA CMOS levels 15 ...

Страница 4: ... V Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ 7 Max Unit VDR VCC for Data Retention 1 V ICCDR Data Retention Current VCC 1V CE VCC 0 2V VIN VCC 0 2V or VIN 0 2V 0 8 3 µA tCDR 8 Chip Deselect to Data Retention Time 0 ns tR 9 Operation Recovery Time tRC ns VCC VCC OUTPUT R2 30 pF INCLUDING JIG AND SCOPE GND 90 10 90 10 Rise Time 1 V ns Fall Time ...

Страница 5: ... Write End 0 ns tHZWE WE LOW to High Z 12 13 18 ns tLZWE WE HIGH to Low Z 12 10 ns Notes 10 BHE BLE is the AND of both BHE and BLE The chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE 11 Test conditions for all parameters other than tri state parameters assume signal transition time of 3 ns 1V ns or less timing reference levels of VCC typ 2 input ...

Страница 6: ...inuously selected OE CE VIL BHE and or BLE VIL 16 WE is HIGH for read cycle 17 Address valid prior to or coincident with CE and BHE BLE transition LOW ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID tRC tAA tOHA 50 50 DATA VALID tRC tACE tLZBE tLZCE tPU DATA OUT HIGH IMPEDANCE IMPEDANCE ICC ISB tHZOE tHZCE tPD OE CE HIGH VCC SUPPLY CURRENT tHZBE BHE BLE tLZOE ADDRESS tDBE tDOE Feedback ...

Страница 7: ...s HIGH simultaneously with WE VIH the output remains in a high impedance state 20 During this period the I Os are in output state and input signals should not be applied Switching Waveforms continued tHD tSD tPWE tSA tHA tAW tWC DATA I O ADDRESS CE WE OE tHZOE DATAIN NOTE20 BHE BLE tBW tSCE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN CE ADDRESS WE DATA I O OE NOTE 20 BHE BLE tBW tSA Feedback ...

Страница 8: ... OE LOW 19 Write Cycle No 4 BHE BLE Controlled OE LOW 19 Switching Waveforms continued DATAIN tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE CE ADDRESS WE DATAI O NOTE 20 tBW BHE BLE DATA I O ADDRESS tSD tSA tHA tAW tWC CE WE DATAIN NOTE 20 tBW BHE BLE tSCE tPWE tHZWE tHD tLZWE Feedback ...

Страница 9: ...ead Active ICC L H H L L High Z Output Disabled Active ICC L H H H L High Z Output Disabled Active ICC L H H L H High Z Output Disabled Active ICC L L X L L Data In I OO I O15 Write Active ICC L L X H L Data In I OO I O7 I O8 I O15 in High Z Write Active ICC L L X L H Data In I O8 I O15 I O0 I O7 in High Z Write Active ICC Ordering Information Speed ns Ordering Code Package Diagram Package Type Op...

Страница 10: ...8X Ø0 25 M C A B Ø0 05 M C B A 0 15 4X 0 21 0 05 1 00 MAX C SEATING PLANE 0 55 MAX 0 25 C 0 10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3 75 5 25 B C D E F G H 6 5 4 6 5 2 3 1 D H F G E C B A 6 00 0 10 8 00 0 10 A 8 00 0 10 6 00 0 10 B 1 875 2 625 0 26 MAX 48 pin VFBGA 6 x 8 x 1 mm 51 85150 51 85150 D Feedback ...

Страница 11: ...ursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in do...

Страница 12: ... L version Changed ball E3 from DNU to NC Removed the redundant footnote on DNU Moved Product Portfolio from Page 3 to Page 2 Changed ICC Max value from 2 mA to 2 5 mA and ICC Typ value from 1 5 mA to 2 mA at f 1 MHz Changed ICC Typ value from 12 mA to 15 mA at f fmax 1 tRC Changed ISB1 and ISB2 Typ values from 0 7 µA to 1 µA and Max values from 2 5 µA to 7 µA Changed VCC stabilization time in foo...

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