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MoBL

®

 CY62128E

Document #: 38-05485 Rev. *F

Page 11 of 12

Document History Page

Document Title: CY62128E MoBL

®

 1-Mbit (128K x 8) Static RAM

Document Number: 38-05485

Revision

ECN 

Submission 

Date

Orig. of 

Change

Description of Change

**

203120

See ECN

AJU

New data sheet

*A

299472

See ECN

SYT

Converted from Advance Information to Preliminary

Changed t

OHA

 from 6 ns to 10 ns for both 35 ns and 45 ns, respectively

Changed t

DOE

 from 15 ns to 18 ns for 35 ns speed bin

Changed t

HZOE

, t

HZWE

 from 12 and 15 ns to 15 and 18 ns for the 35 and 45 ns 

speed bins, respectively

Changed t

HZCE

 from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns speed 

bins, respectively

Changed t

SCE

 from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns speed 

bins, respectively

Changed t

SD

 from 15 and 20 ns to 18 and 22 ns for the 35 and 45 ns speed bins, 

respectively

Added Pb-free package information

Added footnote #9

Changed operating range for SOIC package from Commercial to Industrial

Modified signal transition time from 5 ns to 3 ns in footnote #11

Changed max of I

SB1

, I

SB2

 and I

CCDR

 from 1.0 

μ

A to 1.5 

μ

A

*B

461631

See ECN

NXR

Converted from Preliminary to Final

Included Automotive Range and 55 ns speed bin

Removed 35 ns speed bin

Removed “L” version of CY62128E

Removed Reverse TSOP I package from Product offering

Changed I

CC (Typ) 

from 8 mA to 11 mA and I

CC (max) 

from 12 mA to 16 mA for f 

= f

max

Changed I

CC (max) 

from 1.5 mA to 2.0 mA for f = 1 MHz

Removed I

SB1 

DC Specs from Electrical characteristics table

Changed I

SB2 (max) 

from 1.5 

μ

A to 4 

μ

A

Changed I

SB2 (Typ) 

from 0.5 

μ

A to 1 

μ

A

Changed I

CCDR (max) 

from 1.5 

μ

A to 4 

μ

A

Changed the AC Test load Capacitance value from 100 pF to 30 pF

Changed t

LZOE

 from 3 to 5 ns

Changed t

LZCE

 from 6 to 10 ns

Changed t

HZCE

 from 22 to 18 ns

Changed t

PWE

 from 30 to 35 ns

Changed t

SD

 from 22 to 25 ns

Changed t

LZWE

 from 6 to 10 ns

Updated the Ordering Information Table

*C

464721

See ECN

NXR

Updated the Block Diagram on page # 1

*D

563144

See ECN

AJU

Added footnote 4 on page 2

*E

1024520

See ECN

VKN

Added Automotive-A information

Converted Automotive-E specs to final

Added footnote #9 related to I

SB2

 and I

CCDR

Updated Ordering Information table

*F

2548575

08/05/08

NXR

Corrected typo error in Ordering Information table

[+] Feedback 

Содержание MoBL CY62128E

Страница 1: ...c power down feature that significantly reduces power consumption when addresses are not toggling Placing the device into standby mode reduces power consumption by more than 99 percent when deselected CE1 HIGH or CE2 LOW The eight input and output pins IO0 through IO7 are placed in a high impedance state when the device is deselected CE1 HIGH or CE2 LOW the outputs are disabled OE HIGH or a write ...

Страница 2: ...7 A16 A14 A12 WE VCC A4 A13 A8 A9 OE TSOP I Top View not to scale 1 6 2 3 4 5 7 32 27 31 30 29 28 26 21 25 24 23 22 19 20 IO2 IO1 GND IO7 IO4 IO5 IO6 IO0 CE1 A11 A5 17 18 8 9 10 11 12 13 14 15 16 CE2 A15 NC A10 IO3 A1 A0 A3 A2 1 2 3 4 5 6 7 8 9 10 11 14 31 32 12 13 16 15 29 30 21 22 19 20 27 28 25 26 17 18 23 24 32 Pin SOIC Top View NC A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 IO0 ...

Страница 3: ...L 2 1 mA 0 4 0 4 V VIH Input HIGH Voltage VCC 4 5V to 5 5V 2 2 VCC 0 5 2 2 VCC 0 5 V VIL Input LOW voltage VCC 4 5V to 5 5V 0 5 0 8 0 5 0 8 V IIX Input Leakage Current GND VI VCC 1 1 4 4 μA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 4 4 μA ICC VCC Operating Supply Current f fmax 1 tRC VCC VCC max IOUT 0 mA CMOS levels 11 16 11 35 mA f 1 MHz 1 3 2 1 3 4 ISB2 8 Automatic CE Power down...

Страница 4: ...r Description Conditions Min Typ 3 Max Unit VDR VCC for Data Retention 2 V ICCDR 8 Data Retention Current VCC VDR CE1 VCC 0 2V or CE2 0 2V VIN VCC 0 2V or VIN 0 2V Ind l Auto A 4 μA Auto E 30 μA tCDR 9 Chip Deselect to Data Retention Time 0 ns tR 10 Operation Recovery Time tRC ns Data Retention Waveform 11 VCC min VCC min tCDR VDR 2 0V DATA RETENTION MODE tR VCC CE Notes 10 Full device AC operatio...

Страница 5: ...ddress Setup to Write Start 0 0 ns tPWE WE Pulse Width 35 40 ns tSD Data Setup to Write End 25 25 ns tHD Data Hold from Write End 0 0 ns tHZWE WE LOW to High Z 13 14 18 20 ns tLZWE WE HIGH to Low Z 13 10 10 ns Notes 12 Test conditions for all parameters other than tri state parameters assume signal transition time of 3ns 1V ns or less timing reference levels of 1 5V input pulse levels of 0 to 3V a...

Страница 6: ...tPD IMPEDANCE ICC ISB HIGH ADDRESS CE DATA OUT VCC SUPPLY CURRENT OE DATA VALID tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE ADDRESS CE WE DATA IO OE NOTE 21 Notes 16 The device is continuously selected OE CE1 VIL CE2 VIH 17 WE is HIGH for read cycle 18 Address valid before or similar to CE1 transition LOW and CE2 transition HIGH 19 Data IO is high impedance if OE VIH 20 If CE1 goes HIGH or CE2 goes LO...

Страница 7: ... Power H X X X High Z Deselect Power down Standby ISB X L X X High Z Deselect Power down Standby ISB L H H L Data Out Read Active ICC L H L X Data In Write Active ICC L H H H High Z Selected Outputs Disabled Active ICC Switching Waveforms continued tWC DATA VALID tAW tSA tPWE tHA tHD tSD tSCE ADDRESS CE DATA IO WE DATA VALID tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE ADDRESS CE WE DATA IO NOTE ...

Страница 8: ...C Pb free Industrial CY62128ELL 45ZAXI 51 85094 32 pin STSOP Pb free CY62128ELL 45ZXI 51 85056 32 pin TSOP Type I Pb free 45 CY62128ELL 45SXA 51 85081 32 pin 450 Mil SOIC Pb free Automotive A CY62128ELL 45ZXA 51 85056 32 pin TSOP Type I Pb free 55 CY62128ELL 55SXE 51 85081 32 pin 450 Mil SOIC Pb free Automotive E CY62128ELL 55ZAXE 51 85094 32 pin STSOP Pb free Contact your local Cypress sales repr...

Страница 9: ...MoBL CY62128E Document 38 05485 Rev F Page 9 of 12 Figure 7 32 pin Shrunk Thin Small Outline Package 8 x 13 4 mm 51 85094 51 85094 D Feedback ...

Страница 10: ...MoBL CY62128E Document 38 05485 Rev F Page 10 of 12 Figure 8 32 pin Thin Small Outline Package Type I 8 x 20 mm 51 85056 Feedback ...

Страница 11: ... 11 Changed max of ISB1 ISB2 and ICCDR from 1 0 μA to 1 5 μA B 461631 See ECN NXR Converted from Preliminary to Final Included Automotive Range and 55 ns speed bin Removed 35 ns speed bin Removed L version of CY62128E Removed Reverse TSOP I package from Product offering Changed ICC Typ from 8 mA to 11 mA and ICC max from 12 mA to 16 mA for f fmax Changed ICC max from 1 5 mA to 2 0 mA for f 1 MHz R...

Страница 12: ...r the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement Any reproduction modification translation compilation or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress Disclaimer CYPRESS...

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