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CY7C1338G

Document #: 38-05521 Rev. *D

Page 10 of 17

Switching Characteristics 

Over the Operating Range

[11, 12, 13, 14, 15, 16] 

Parameter

Description

–133 –100 

Unit

Min.

Max.

Min.

Max.

t

POWER

V

DD

(Typical) to the first Access

[11]

1

1

ms

Clock

t

CYC

Clock Cycle Time

7.5

10

ns

t

CH

Clock HIGH

2.5

4.0

ns

t

CL

Clock LOW

2.5

4.0

ns

Output Times

t

CDV

Data Output Valid After CLK Rise

6.5

8.0

ns

t

DOH

Data Output Hold After CLK Rise

2.0

2.0

ns

t

CLZ

Clock to Low-Z

[12, 13, 14]

0

0

ns

t

CHZ

Clock to High-Z

[12, 13, 14]

3.5

3.5

ns

t

OEV

OE LOW to Output Valid

3.5

3.5

ns

t

OELZ

OE LOW to Output Low-Z

[12, 13, 14]

0

0

ns

t

OEHZ

OE HIGH to Output High-Z

[12, 13, 14]

3.5

3.5

ns

Setup Times

t

AS

Address Set-up Before CLK Rise

1.5

2.0

ns

t

ADS

ADSP, ADSC Set-up Before CLK Rise

1.5

2.0

ns

t

ADVS

ADV Set-up Before CLK Rise

1.5

2.0

ns

t

WES

GW, BWE, BW

X

 Set-up Before CLK Rise

1.5

2.0

ns

t

DS

Data Input Set-up Before CLK Rise

1.5

1.5

ns

t

CES

Chip Enable Set-up

1.5

2.0

ns

Hold Times

t

AH

Address Hold After CLK Rise

0.5

0.5

ns

t

ADH

ADSP, ADSC Hold After CLK Rise

0.5

0.5

ns

t

WEH

GW, BWE, BW

X

 Hold After CLK Rise

0.5

0.5

ns

t

ADVH

ADV Hold After CLK Rise

0.5

0.5

ns

t

DH

Data Input Hold After CLK Rise

0.5

0.5

ns

t

CEH

Chip Enable Hold After CLK Rise

0.5

0.5

ns

Notes:

11. This part has a voltage regulator internally; t

POWER

 is the time that the power needs to be supplied above V

DD

(minimum) initially before a read or write operation 

can be initiated.

12. t

CHZ

, t

CLZ

,t

OELZ

, and t

OEHZ

 are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

13. At any given voltage and temperature, t

OEHZ

 is less than t

OELZ

 and t

CHZ

 is less than t

CLZ

 to eliminate bus contention between SRAMs when sharing the same 

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed 
to achieve High-Z prior to Low-Z under the same system conditions.

14. This parameter is sampled and not 100% tested.
15. Timing reference level is 1.5V when V

DDQ

 = 3.3V and is 1.25V when V

DDQ

 = 2.5V.

16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

Содержание CY7C1338G

Страница 1: ...SC ADSP and ADV Write Enables BW A D and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1338G allows either interleaved or linear burst sequences selec...

Страница 2: ...VSSQ VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK G...

Страница 3: ...put Synchronous Chip Enable 2 Input active HIGH Sampled on the rising edge of CLK Used in conjunction with CE1 and CE3 to select deselect the device CE2 is sampled only when a new external address is...

Страница 4: ...f CE1 is HIGH ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW addresses presented to the device are captured in the address register...

Страница 5: ...ince this is a common I O device the asynchronous OE input signal must be deasserted and the I Os must be tri stated prior to the presentation of data to DQs As a safety precaution the data lines are...

Страница 6: ...Burst Next H X X L X H L L X L H D Read Cycle Suspend Burst Current X X X L H H H H L L H Q Read Cycle Suspend Burst Current X X X L H H H H H L H Tri State Read Cycle Suspend Burst Current H X X L X...

Страница 7: ...rite Bytes C B H L H L L H Write Bytes C B A H L H L L L Write Byte D H L L H H H Write Bytes D A H L L H H L Write Bytes D B H L L H L H Write Bytes D B A H L L H L L Write Bytes D B H L L L H H Writ...

Страница 8: ...I O 1 7 VDD 0 3V V VIL Input LOW Voltage 8 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Current of MODE Input VSS 30 A Input VDD 5...

Страница 9: ...Test conditions follow standard test methods and procedures for measuringthermalimpedance per EIA JESD51 30 32 34 1 C W JC Thermal Resistance Junction to Case 6 85 14 0 C W AC Test Loads and Waveform...

Страница 10: ...0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 5 0 5 ns tWEH GW BWE BWX Hold After CLK Rise 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 5 0 5 ns tDH Data Input Hold After CLK Rise 0 5 0 5 ns tCEH Chi...

Страница 11: ...H or CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its ini...

Страница 12: ...ADDRESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS...

Страница 13: ...nitiated by ADSP or ADSC 20 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1...

Страница 14: ...ed when entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 22 DQs are in high Z when exiting ZZ sleep mode Timing Diagrams continued tZZ I SUPPLY C...

Страница 15: ...Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1338G 100BGC 51 85115 119 ball Ball Grid Array 14 x 22 x 2 4 mm CY7C1338G 100BGXC 119 ball Ball Grid Array 14 x 22 x 2 4 mm Lead Free CY7C1338G 100AXI 51...

Страница 16: ...here a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer...

Страница 17: ...l Resistance table Removed comment on the availability of BG lead free package Updated the Ordering Information by shading and unshading MPNs as per availability C 418633 See ECN RXU Converted from Pr...

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