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CY7C1297H

1-Mbit (64K x 18) Flow-Through Sync SRAM

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05669 Rev. *B

 Revised July 6, 2006

Features

• 64K x 18 common I/O

• 3.3V core power supply (V

DD

)

• 2.5V/3.3V I/O power supply (V

DDQ

• Fast clock-to-output times

— 6.5 ns (for 133-MHz version)

• Provide high-performance 2-1-1-1 access rate

• User-selectable burst counter supporting Intel

®

 

Pentium

®

 interleaved or linear burst sequences

• Separate processor and controller address strobes 

• Synchronous self-timed write

• Asynchronous output enable

• Available in JEDEC-standard lead-free 100-Pin TQFP 

package 

• “ZZ” Sleep Mode option

Functional Description

[1]

The CY7C1297H is a 64K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE

1

), depth-expansion Chip Enables (CE

2

 and

 

CE

3

), Burst

Control inputs (ADSC,  ADSP,  and  ADV), Write Enables
(BW

[A:B]

, and BWE), and Global Write (GW). Asynchronous

inputs include the Output Enable (OE) and the ZZ pin.

The CY7C1297H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.

Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).

The CY7C1297H operates from a +3.3V core power supply
while all outputs may operate either with a +2.5V or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible. 

 

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

ADDRESS
REGISTER

ADV

CLK

BURST

COUNTER AND

LOGIC

CLR

Q1

Q0

ADSC

CE

1

OE

SENSE

AMPS

MEMORY

ARRAY

ADSP

OUTPUT

BUFFERS

INPUT

REGISTERS

MODE

CE

2

CE

3

GW

BWE

A0,A1,A

BW

B

BW

A

DQ

B

,DQP

B

WRITE REGISTER

DQ

A

,DQP

A

WRITE REGISTER

ENABLE

REGISTER

A[1:0]

DQs
DQP

A

DQP

B

DQ

B

,DQP

B

WRITE DRIVER

DQ

A

,DQP

A

WRITE DRIVER

SLEEP

CONTROL

ZZ

Logic Block Diagram

[+] Feedback 

Содержание CY7C1297H

Страница 1: ...and CE3 Burst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1297H allows either interleaved or linear burst sequences selected by the MODE input pin A HIGH selects an interleaved burst sequence while a LOW selects a linear burst sequence Burst accesses can be initiated with the Processor Add...

Страница 2: ...NC NC VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSP A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63...

Страница 3: ...e when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK When asserted it automatically increments the address in a burst cycle ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW addresses presented to the device are captured in the address registers A 1 0 are also loaded in...

Страница 4: ... device Byte Writes are allowed During byte writes BWA controls DQA and BWB controls DQB All I Os are tri stated during a Byte Write Since this is a common I O device the asynchronous OE input signal must be deasserted and the I Os must be tri stated prior to the presentation of data to DQs As a safety precaution the data lines are tri stated once a Write cycle is detected regardless of the state ...

Страница 5: ... Continue Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X L X H L L X L H D Read Cycle Suspend Burst Current X X X L H H H H L L H Q Read Cycle Suspend Burst Current X X X L H H H H H L H Tri State Read Cycle Suspend Burst Current H X X L X H H H L L H Q R...

Страница 6: ...t 38 05669 Rev B Page 6 of 15 Truth Table for Read Write 2 3 Function GW BWE BWB BWA Read H H X X Read H L H H Write Byte A DQPA H L H L Write Byte B DQPB H L L H Write All Bytes H L L L Write All Bytes L X X X Feedback ...

Страница 7: ...V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 µA Input Current of MODE Input VSS 30 µA Input VDD 5 µA Input Current of ZZ Input VSS 5 µA Input VDD 30 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply Current VDD Max IOUT 0 mA f fMAX 1 tCYC 7 5 ns...

Страница 8: ...w standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W ΘJC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially and after any design or process change that may affect these parameters OUTPUT R 317Ω R 351Ω 5 pF INCLUDING JIG AND SCOPE a b OUTPUT RL 50Ω Z0 50Ω VT 1 5V 3 3V ALL INPUT PULSES VDDQ GND 90 10 90 10 1 ns ...

Страница 9: ... 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A B Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 0 5 ns Notes 10 Timing reference level is 1 5V when VDDQ 3 3V and is 1 25V when VDDQ 2 5V 11 Test conditions shown in a of AC Test Loads unless otherwise noted 12 Thi...

Страница 10: ... CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial state t ADVH t ADVS t WEH t WES tADH tADS Q A2 Q A2 1 Q A2 2 Q A1 Q A2 Q A2 1 Q A2 2 Q A2 3 A2 ADV suspends burst Deselect Cycle DON T CARE UNDEFINED ADSP ADSC GW BWE BW A B CE ADV OE Feedback ...

Страница 11: ...RESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH tWES t DH t DS t WEH t WES Byte write signals are ignored for first cycle when ADSP initiates burst ADSC extends burst ADV suspends burst DON T CARE UNDEFINED ADSP ADSC BWE BW A B GW CE ADV OE Data ...

Страница 12: ...ycle is performed 19 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q A4 2 Q A4 3 t WEH t WES t OEHZ tDH tDS tCDV tOELZ A1 A5 A6 D A5 D A6 Q A1 Back to Back WRITEs DON T CARE UNDEFINED ADSP ADSC BWE BW A B CE ADV OE Data In D Data Out Q Feedback ...

Страница 13: ...hen entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 21 DQs are in High Z when exiting ZZ sleep mode Timing Diagrams continued tZZ I SUPPLY CLK ZZ tZZREC ALL INPUTS except ZZ DON T CARE I DDZZ tZZI tRZZI Outputs Q High Z DESELECT or READ Only Feedback ...

Страница 14: ... all charges Ordering Information Not all of the speed package and temperature ranges are available Please contact your local sales representative or visit www cypress com for actual products offered Speed MHz Ordering Code Package Diagram Package Type Operating Range 100 CY7C1297H 100AXC 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1297H 100AXI Industrial 133 CY7...

Страница 15: ...poration on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Input Leakage Current except ZZ and MODE in the Electrical Characteristics Table Modified test condition from VIH VDD to VIH VDD Replaced Package Name column with Package Diagram in the Ordering Informat...

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