Cypress Semiconductor CY62157ESL, Техническое описание

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CY62157ESL MoBL
®
Document #: 001-43141 Rev. ** Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential..................–0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
[3, 4]
...........................................–0.5V to 6.0V
DC Input Voltage
[3, 4]
........................................–0.5V to 6.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[5]
CY62157ESL Industrial –40°C to +85°C 2.2V–3.6V,
and
4.5V–5.5V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns
Unit Min Typ
[2]
Max
V
OH
Output HIGH Voltage 2.2 < V
CC
< 2.7 I
OH
= –0.1 mA 2.0 V
2.7 < V
CC
< 3.6 I
OH
= –1.0 mA 2.4
4.5 < V
CC
< 5.5 I
OH
= –1.0 mA 2.4
V
OL
Output LOW Voltage 2.2 < V
CC
< 2.7 I
OL
= 0.1 mA 0.4 V
2.7 < V
CC
< 3.6 I
OL
= 2.1mA 0.4
4.5 < V
CC
< 5.5 I
OL
= 2.1mA 0.4
V
IH
Input HIGH Voltage 2.2 < V
CC
< 2.7 1.8 V
CC
+ 0.3 V
2.7 < V
CC
< 3.6 2.2 V
CC
+ 0.3
4.5 < V
CC
< 5.5 2.2 V
CC
+ 0.5
V
IL
Input LOW Voltage 2.2 < V
CC
< 2.7 –0.3 0.6 V
2.7 < V
CC
< 3.6 –0.3 0.8
4.5 < V
CC
< 5.5 –0.5 0.8
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1
μ
A
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled –1 +1
μ
A
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA,
CMOS levels
18 25 mA
f = 1 MHz 1.8 3
I
SB1
Automatic CE Power
down Current — CMOS
Inputs
CE > V
CC
−
0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE, BHE, BLE and WE), V
CC
= V
CC(max)
2 8
μ
A
I
SB2
Automatic CE Power
down Current — CMOS
Inputs
CE > V
CC
– 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
2 8
μ
A
Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75V for pulse durations less than 20 ns.
5. Full Device AC operation assumes a 100
μ
s ramp time from 0 to V
CC
(min) and 200
μ
s wait time after V
CC
stabilization.
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