Cypress Semiconductor CY62146EV30, Техническое описание

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CY62146EV30 MoBL
®
Document #: 38-05567 Rev. *C Page 4 of 12
Capacitance
(For All Packages)
[9]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistance [9]
Parameter Description Test Conditions
VFBGA
Package
TSOP II
Package Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
75 77
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
10 13
°
C/W
AC Test Loads and Waveforms
Parameters 2.50V 3.0V Unit
R1 16667 1103
Ω
R2 15385 1554
Ω
R
TH
8000 645
Ω
V
TH
1.20 1.75 V
Data Retention Characteristics
(Over the Operating Range)
Parameter Description Conditions Min Typ
[2]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
[8]
Data Retention Current V
CC
= 1.5V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
0.8 7
µ
A
t
CDR
[9]
Chip Deselect to Data Retention Time 0 ns
t
R
[10]
Operation Recovery Time t
RC
ns
Data Retention Waveform
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
ALL INPUT PULSES
R
TH
R1
Equivalent to: THEVENIN EQUIVALENT
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE
Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
µ
s or stable at V
CC(min)
> 100
µ
s.