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Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 001-08029 Rev. *E

 Revised March 26, 2007

CY62138FV30 MoBL

®

2-Mbit (256K x 8) Static RAM

Features

• Very high speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62138CV25/30/33
• Ultra low standby power

— Typical standby current: 1

 

µ

A

— Maximum standby current: 5

 

µ

A

• Ultra low active power

— Typical active current: 1.6 mA @ f = 1 MHz

• Easy memory expansion with CE

1

, CE

2,

 and OE features

• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin 

SOIC, 32-pin TSOP I and 32-pin STSOP packages

Functional Description 

[1]

The CY62138FV30 is a high performance CMOS static RAM

organized as 256K words by 8 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL

®

) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that significantly

reduces power consumption. Place the device into standby

mode reducing power consumption when deselected (CE

1

HIGH or CE

2

 LOW). 

To write to the device, take Chip Enable (CE

LOW and CE

2

HIGH) and Write Enable (WE) inputs LOW. Data on the eight

IO pins (IO

0

 through IO

7

) is then written into the location

specified on the address pins (A

0

 through A

17

).

To read from the device, take Chip Enable (CE

LOW and CE

2

HIGH) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins appear on

the IO pins.
The eight input and output pins (IO

0

 through IO

7

) are placed

in a high impedance state when the device is deselected (CE

1

HIGH or CE

2

 LOW), the outputs are disabled (OE HIGH), or

during a write operation (CE

LOW and CE

2

 HIGH and WE

LOW).

Logic Block Diagram

A0

IO0

IO7

IO1
IO2
IO3
IO4
IO5
IO6

A1

A2

A3

A4

A5

A6

A7

A8

A9

SENSE AMPS

POWER

 DOWN

WE

OE

A

13

A

14

A

15

A

16

ROW DECODER

COLUMN DECODER

256K x 8

ARRAY

DATA IN DRIVERS

A10

A11

A

17

CE1

CE2

A

12

Note

1. For best practice recommendations, refer to the Cypress application note 

“System Design Guidelines”

 at 

http://www.cypress.com.

[+] Feedback 

Содержание CY62138FV30

Страница 1: ...own feature that significantly reduces power consumption Place the device into standby mode reducing power consumption when deselected CE1 HIGH or CE2 LOW To write to the device take Chip Enable CE1 L...

Страница 2: ...17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 VSS VCC CE2 WE OE CE1 A6 A7 A16 A14 A12 WE VCC A4 A13 A8 A9 OE TSOP I Top View not to scale 1 6 2 3 4 5 7 3...

Страница 3: ...For BGA package 0 3 0 6 V VCC 2 7V to 3 6V 0 3 0 8 V VCC 2 2V to 3 6V For other packages 0 3 0 6 V IIX Input Leakage Current GND VI VCC 1 1 A IOZ Output Leakage Current GND VO VCC output disabled 1 1...

Страница 4: ...meter Description Conditions Min Typ 3 Max Unit VDR VCC for Data Retention 1 5 V ICCDR 7 Data Retention Current VCC 1 5V CE1 VCC 0 2V or CE2 0 2V VIN VCC 0 2V or VIN 0 2V 1 4 A tCDR 8 Chip Deselect to...

Страница 5: ...h 35 ns tSD Data Setup to Write End 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High Z 12 13 18 ns tLZWE WE HIGH to Low Z 12 10 ns Notes 11 Test conditions for all parameters other than tr...

Страница 6: ...EDANCE ICC ISB HIGH ADDRESS CE DATA OUT VCC SUPPLY CURRENT OE DATA VALID tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE ADDRESS CE WE DATA IO OE NOTE 20 Notes 15 The device is continuously selected OE CE1 VI...

Страница 7: ...wer H X X X High Z Deselect Power Down Standby ISB X L X X High Z Deselect Power Down Standby ISB L H H L Data Out Read Active ICC L H H H High Z Output Disabled Active ICC L H L X Data in Write Activ...

Страница 8: ...32 pin STSOP Pb free CY62138FV30LL 45ZXI 51 85056 32 pin TSOP I Pb free CY62138FV30LL 45SXI 51 85081 32 pin SOIC Pb free Package Diagrams Figure 1 36 ball VFBGA 6 x 8 x 1 mm 51 85149 A 1 A1 CORNER 0...

Страница 9: ...Document 001 08029 Rev E Page 9 of 13 CY62138FV30 MoBL Figure 2 32 pin TSOP II 51 85095 Package Diagrams continued 51 85095 Feedback...

Страница 10: ...ms continued 0 546 13 868 0 440 11 176 0 101 2 565 0 050 1 270 0 014 0 355 0 118 2 997 0 004 0 102 0 047 1 193 0 006 0 152 0 023 0 584 0 793 20 142 0 450 11 430 0 566 14 376 0 111 2 819 0 817 20 751 B...

Страница 11: ...Document 001 08029 Rev E Page 11 of 13 CY62138FV30 MoBL Figure 4 32 pin TSOP I 8 x 20 mm 51 85056 Package Diagrams continued 51 85056 D Feedback...

Страница 12: ...en agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result...

Страница 13: ...orrected typo in 32 pin TSOP II pin configuration diagram on page 2 changed pin 24 from CE1to OE and pin 22 from CE to CE1 Changed the ICC max value from 2 25 mA to 2 5 mA for test condition f 1 MHz C...

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