GR740-UM-DS, Nov 2017, Version 1.7
460
www.cobham.com/gaisler
GR740
40.3
Pin assignment
The pin assignment in table 597 shows the implementation characteristics of each signal in the device.
Pad drive strength is configurable and described in section 30. A BSDL file for the device is available
from Cobham Gaisler
.
Table 597.
Pin assignment
Position
Signal Name
I/O
Level
Volt.
[V] Pull
Polarity
Note
A1
GND
Power/ground pin
GND
A2
GND
Power/ground pin
GND
A3
PROMIO_ADDR[6]
O
LVCMOS
3.3
-
PROM
A4
PROMIO_ADDR[2]
O
LVCMOS
3.3
-
PROM
A5
PROMIO_WEN
O
LVCMOS
3.3
-
Low
PROM
A6
PROMIO_DATA[14]
IO
LVCMOS
3.3
-
PROM
A7
PROMIO_DATA[10]
IO
LVCMOS
3.3
-
PROM
A8
PROMIO_DATA[6]
IO
LVCMOS
3.3
-
PROM
A9
PROMIO_DATA[2]
IO
LVCMOS
3.3
-
PROM
A10
GR1553_BUSATXIN
O
LVCMOS
3.3
-
MIL-1553
A11
SPI_MOSI
IO
LVCMOS
3.3
-
SPI
A12
SYS_CLK
I
LVCMOS
3.3
-
Sys/spw CLK
A13
MEM_EXTCLK
I
LVCMOS
3.3
-
Sys/spw CLK
A14
SYS_EXTLOCK
I
LVCMOS
3.3
-
Sys/spw CLK
A15
JTAG_TCK
I
LVCMOS
3.3
-
JTAG
A16
JTAG_TRST
I
LVCMOS
3.3
-
Low
JTAG
A17
GPIO[14]
IO
LVCMOS
3.3
-
GPIO
A18
GPIO[12]
IO
LVCMOS
3.3
-
GPIO
A19
GPIO[8]
IO
LVCMOS
3.3
-
GPIO
A20
GPIO[4]
IO
LVCMOS
3.3
-
GPIO
A21
GPIO[0]
IO
LVCMOS
3.3
-
GPIO
A22
PLL_BYPASS[0]
I
LVCMOS
3.3
-
High
Bootstrap
A23
GND
Power/ground pin
GND
A24
GND
Power/ground pin
GND
A25
GND
Power/ground pin
GND
B1
GND
Power/ground pin
GND
B2
PROMIO_ADDR[9]
O
LVCMOS
3.3
-
PROM
B3
PROMIO_ADDR[8]
O
LVCMOS
3.3
-
PROM
B4
PROMIO_ADDR[4]
O
LVCMOS
3.3
-
PROM
B5
PROMIO_ADDR[0]
O
LVCMOS
3.3
-
PROM
B6
PROMIO_READ
O
LVCMOS
3.3
-
High
PROM
B7
PROMIO_DATA[12]
IO
LVCMOS
3.3
-
PROM
B8
PROMIO_DATA[8]
IO
LVCMOS
3.3
-
PROM
B9
PROMIO_DATA[4]
IO
LVCMOS
3.3
-
PROM
B10
GR1553_CLK
I
LVCMOS
3.3
-
MIL-1553
B11
SPI_MISO
IO
LVCMOS
3.3
-
SPI
B12
SPW_CLK
I
LVCMOS
3.3
-
Sys/spw CLK
B13
SYS_RESETN
I
LVCMOS
3.3
-
Low
Sys/spw CLK
B14
JTAG_TMS
I
LVCMOS
3.3
-
JTAG