EES3 Hardware Interface Description
5.5 Pad Assignment and Signal Description
99
EES3_HD_v01.100b
Page 82 of 118
2009-08-12
Confidential / Released
Please note that the reference voltages listed in
are the values measured directly on
the EES3 module. They do not apply to the accessories connected.
Table 27:
Signal description
Function
Signal name
IO
Signal form and level
Comment
Power
supply
BATT+
I
V
I
max = 4.5V
V
I
typ = 3.8V
V
I
min = 3.2V during Tx burst on
board
I
2A, during Tx burst
n Tx = n x 577µs peak current
every 4.616ms
Three lines of BATT+ and GND
must be connected in parallel
for supply purposes because
higher peak currents may
occur.
Pads 68 and 74 are connected
to module’s RF power amplifier,
whereas pad 69 is connected to
baseband processor.
Minimum voltage must not fall
below 3.2V including drop, rip-
ple, spikes.
Power
supply
GND
Ground
Application Ground
Charge
Interface
VCHARGE
I
V
I
min = 3.1V
V
I
max = 7.00V
This line signalizes to the pro-
cessor that the charger is con-
nected.
If unused keep line open.
BATT_TEMP
I
Connect NTC with R
NTC
10k
@
for B value of NTC.
Battery temperature measure-
ment via NTC resistance.
NTC should be installed inside
or near battery pack to enable
proper charging and deliver
temperature values.
If unused keep line open.
ISENSE
I
V
I
max = 4.65V
V
I
max to V
BATT+
= +0.3V at nor-
mal condition
ISENSE is required for measur-
ing the charge current. For this
purpose, a shunt resistor for
current measurement needs to
be connected between ISENSE
and VSENSE.
If unused connect line to
VSENSE.
VSENSE
I
V
I
max = 4.5V
VSENSE must be directly con-
nected to BATT+ at battery con-
nector or external power
supply.
CHARGE-
GATE
O
V
O
max = 7.0V
I
O
typ = 5.2mA (for fast charging @
CHARGEGATE = 1V)
Control line to the gate of
charge FET or bipolar transis-
tor.
If unused keep line open.
