Broadcast Concepts P1000FM-188PLA Скачать руководство пользователя страница 4

Broadcast Concepts Inc

  

11700 NW 102

nd

 Road Suite 4Medley FL 33178 

Tel: 305.887.8400 FAX 305.887.8444 

 

Broadcast Concepts Inc 
Revised 8/20/2014 

4

driving blind. You won’t be able to see what’s really going on and the end result could be 
transistors that burn out. 

 

Calculating Die Temperature: 
 
How do you know if the amplifier is running to hot? There are symptoms to watch for. If there is a 
significant drop in power of more than 5% over a short period of time the amplifier is likely overheating.  
 
There is a scientific method that must be used to verify that the amplifier is installed and running within 
thermal limits. We do not recommend the “dropping power with time test” described above. 
 
Use the thermal resistance (Rth) of the device to calculate the junction temperature. The Rth from the 
junction to the device flange for the BLF188XR is 0.11 °C /W. If the device is soldered down to the pallet 
baseplate, this same value can be used to determine Tj. If the device is greased down to the pallet 
baseplate, the Rth(j-h) value becomes 0.26K/W, as the thermal resistivity for the grease layer from the 
flange to the baseplate is approximately 0.15 °C /W. 
 
Note: 

We always use thermal grease under transistors because soldering them directly would render the 

pallets unserviceable.

 

 
Example: 

Assuming that the device is running at 950W with the RF output power at 48V while 

consuming 25.3 amps on a pallet baseplate (e.g. 70 °C). Tj can be determined based on this condition for 
the given baseplate temperature: 

• 

Dissipated power (Pd) = (48V x 25.3A) – (950W) = 264.4W 

• 

Temperature rise (Tr) = Pd ´ Rth = 264.4W  (0.26 °C/W) = 68.7 °C 

• 

Junction temperature (Tj) = Th + Tr = 70°C + 68.7 °C = 138.7 °C 

 
The best way to make this calculation is to measure the temperature of the transistor flange directly. In this 
case temperature rise is calculated using 0.11°C/W.  
 
The maximum junction temperature for most LDMOS devices is 200C. We suggest staying under 175C. 
In the example above a base plate temperature of 70C was used. When the pallet is mounted to an efficient 
heatsink like one of our bonded fin models base plate temperatures in the 50C range are easily maintained 
at full output power. 

 

 

 
 

 

 

Содержание P1000FM-188PLA

Страница 1: ...e maximum current rating 26 A dc Insertion Phase variation unit to unit 3 5 degrees Power gain unit to unit 1 0 dB F2 Second Harmonic 35 40 dB F3 Third Harmonic 25 30 dB Bias Current Factory set 50V 9...

Страница 2: ...e used 2 Ensure mounting surface is flat to better than 0 0025 3 Use a thin layer of thermal compound on the backside of the PA no more than 0 001 0 002 thickness 4 Torque all screws to 10 12 in lbs U...

Страница 3: ...arts Transistor pocket must be cleaned with alcohol all debris removed and new thermal compound applied prior to installing new transistor Bias voltage should be adjusted to 0 5V before new part is in...

Страница 4: ...s greased down to the pallet baseplate the Rth j h value becomes 0 26K W as the thermal resistivity for the grease layer from the flange to the baseplate is approximately 0 15 C W Note We always use t...

Страница 5: ...Broadcast Concepts Inc 11700 NW 102nd Road Suite 4Medley FL 33178 Tel 305 887 8400 FAX 305 887 8444 Broadcast Concepts Inc Revised 8 20 2014 5...

Страница 6: ...ch which can cause the transistor to overheat and slowly burnout The cause of filter reactions is not fully understood however reflected harmonic energy at a certain phase and frequency is strongly su...

Страница 7: ...ast system there needs to be a low pass filter and directional coupler These components introduce losses We feel that this pallet can easily meet the design requirements for a 900W system That s 900W...

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