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3591A–FLASH–12/05

AT49BV160D(T)

39. Common Flash Interface Definition Table

Address

AT49BV160DT

AT49BV160D

10h

0051h

“Q”

11h

0052h

“R”

12h

0059h

“Y”

13h

0003h

14h

0000h

15h

0041h

16h

0000h

17h

0000h

18h

0000h

19h

0000h

1Ah

0000h

1Bh

0027h

VCC min write/erase

1Ch

0036h

VCC max write/erase

1Dh

0090h

VPP min voltage

1Eh

00A0h

VPP max voltage

1Fh

0004h

Typ word write – 10 µs

20h

0002h

Typ dual word program time – 5 µs

21h

0009h

Typ sector erase, 500 ms

22h

0000h

Typ chip erase, not supported

23h

0004h

Max word write/typ time

24h

0004h

Max dual word program time/typ time

25h

0004h

Max sector erase/typ sector erase

26h

0000h

Max chip erase/ typ chip erase

27h

0015h

Device size

28h

0001h

x16 device

29h

0000h

x16 device

2Ah

0002h

Maximum number of bytes in multiple byte write = 4

2Bh

0000h

Maximum number of bytes in multiple byte write = 4

2Ch

0002h

2 regions, x = 2

2Dh

001Eh

0007h

64K bytes, Y = 30 (Top); 8K bytes, Y = 7 (Bottom)

2Eh

0000h

64K bytes, Y = 30 (Top); 8K bytes, Y = 7 (Bottom)

2Fh

0000h

0020h

64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom)

30h

0001h

0000h

64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom)

31h

0007h

001Eh

8K bytes, Y = 7 (Top); 64K bytes, Y = 30 (Bottom)

32h

0000h

8K bytes, Y = 7 (Top); 64K bytes, Y = 30 (Bottom)

33h

0020h

0000h

8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom)

34h

0000h

0001h

8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom)

Содержание AT49BV160D

Страница 1: ...bits each The memory is divided into 39 sectors for erase operations The device is offered in a 48 lead TSOP and a 46 ball CBGA package The device has CE and OE control signals to avoid any bus contention This device can be read or reprogrammed using a single power supply making it ideally suited for in system programming The device powers on in the read mode Command sequences are used to place th...

Страница 2: ...1 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 VCCQ GND I O15 I O7 I O14 I O6 I O13 I O5 I O12 I O4 VCC I O11 I O3 I O10 I O2 I O9 I O1 I O8 I O0 OE GND CE A0 A B C D E F 1 2 3 4 5 6 7 A13 A14 A15 A16 VCCQ GND A11 A10 A12 I O14 I O15 I O7 A8 WE ...

Страница 3: ... Standard microprocessor write timings are used The address locations used in the command sequences are not affected by entering the com mand sequences 4 2 Read When the AT49BV160D T is in the read mode with CE and OE low and WE high the data stored at the memory location determined by the address pins are asserted on the outputs The outputs are put in the high impedance state whenever CE or OE is...

Страница 4: ...rase a sector that has been protected will result in the operation terminat ing immediately 4 5 Word Programming Once a memory sector is erased it is programmed to a logical 0 on a word by word basis Programming is accomplished via the Internal Device command register and is a two bus cycle operation The device will automatically generate the required internal program pulses Any commands written t...

Страница 5: ... SR6 ERASE SUSPEND STATUS ESS 1 Erase Suspended 0 Erase In Progress Completed When Erase Suspend is issued WSM halts execution and sets both WSMS and ESS bits to 1 ESS bit remains set to 1 until an Erase Resume command is issued SR5 ERASE STATUS ES 1 Error in Sector Erase 0 Successful Sector Erase When this bit is set to 1 WSM has applied the max number of erase pulses to the sector and is still u...

Страница 6: ...uently Once either of these two modes is enabled the contents of the selected sector is read only and cannot be erased or programmed Each sector can be independently programmed for either the Softlock or Hardlock sector protection mode At power up and reset all sectors have their Soft lock protection mode enabled 4 8 1 Softlock and Unlock The Softlock protection mode can be disabled by issuing a t...

Страница 7: ...protection mode is enabled The sector cannot be unlocked VCC 5V 1 0 0 Yes No sector is locked VCC 5V 1 0 1 No Sector is Softlocked The Unlock command can unlock the sector VCC 5V 1 1 0 Yes Hardlock protection mode is overridden and the sector is not locked VCC 5V 1 1 1 No Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command VIL x x x No Erase and Program Ope...

Страница 8: ...ry CFI Query Program Program Resume Erase Resume Sector Softlock Hardlock Sector Unlock 4 10 Program Suspend Program Resume The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory After the Program Suspend command is given the device requires a maximum of 10 µs to suspend the programming operation After the progr...

Страница 9: ...to return to the read mode 4 13 Common Flash Interface CFI CFI is a published standardized data structure that may be read from a flash device CFI allows system software to query the installed device to determine the configurations various electrical and timing parameters and functions supported by the device CFI is used to allow the system to learn how to interface to the flash device most optima...

Страница 10: ...m operations Full status register check can be done after each program or after a sequence of program operations Write FF after the last operation to set to the Read state 7 Full Status Check Flowchart Read Status Register Program Successful SR3 SR1 0 0 SR4 0 1 1 1 VPP Range Error Device Protect Error Program Error 8 Full Status Check Procedure Bus Operation Command Comments Idle None Check SR3 1 ...

Страница 11: ... Any Address Read Status 10 Program Suspend Resume Procedure Bus Operation Command Comments Write Program Suspend Data B0 Addr Any Address Write Read Status Data 70 Addr Any address Read None Status register data Toggle CE or OE to update status register Addr Any address Idle None Check SR7 1 WSM Ready 0 WSM Busy Idle None Check SR2 1 Program suspended 0 Program completed Write Read Array Data FF ...

Страница 12: ... each sector erase or after a sequence of sector erasures Write FF after the last operation to enter read mode 13 Full Erase Status Check Flowchart 0 0 0 1 1 1 1 1 0 Read Status Register Erase Successful SR1 Sector Sector Locked Error SR3 VP P Range Error SR4 SR5 Command Sequence Error SR5 Erase Error Sector 14 Full Erase Status Check Procedure Bus Operation Command Comments Idle None Check SR3 1 ...

Страница 13: ...16 Erase Suspend Resume Procedure Bus Operation Command Comments Write Erase Suspend Data B0 Addr Any address Write Read Status Data 70 Addr Any address Read None Status register data Toggle CE or OE to update status register Addr Any address Idle None Check SR7 1 WSM Ready 0 WSM Busy Idle None Check SR6 1 Erase suspended 0 Erase completed Write Read or Program Data FF or 40 Addr Any address Read ...

Страница 14: ...ill return an error Repeat for subsequent programming operations Full status register check can be done after each program or after a sequence of program operations Write FF after the last operation to return to the Read mode 19 Full Status Check Flowchart 1 1 Read Status Register Data Program Successful VPP Range Error Program Error Register Locked Program Aborted 0 0 SR3 SR4 SR3 SR4 SR3 SR4 0 1 ...

Страница 15: ...ition Table Command Sequence Bus Cycles 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle Addr Data Addr Data Addr Data Read 1 XX FF Sector Erase Confirm 2 XX 20 SA 2 D0 Word Program 2 XX 40 10 Addr DIN Dual word Program 3 3 XX E0 Addr0 DIN0 Addr1 DIN1 Erase Program Suspend 1 XX B0 Erase Program Resume 1 XX D0 Product ID Entry 4 1 XX 90 Sector Softlock 2 XX 60 SA 2 01 Sector Hardlock 2 XX 60 SA 2 2F Secto...

Страница 16: ...otection register i e A19 A8 0 23 Protection Register Addressing Table Word Use Sector A7 A6 A5 A4 A3 A2 A1 A0 0 Factory A 1 0 0 0 0 0 0 1 1 Factory A 1 0 0 0 0 0 1 0 2 Factory A 1 0 0 0 0 0 1 1 3 Factory A 1 0 0 0 0 1 0 0 4 User B 1 0 0 0 0 1 0 1 5 User B 1 0 0 0 0 1 1 0 6 User B 1 0 0 0 0 1 1 1 7 User B 1 0 0 0 1 0 0 0 ...

Страница 17: ...0 37FFF SA14 64K 32K 38000 3FFFF SA15 64K 32K 40000 47FFF SA16 64K 32K 48000 4FFFF SA17 64K 32K 50000 57FFF SA18 64K 32K 58000 5FFFF SA19 64K 32K 60000 67FFF SA20 64K 32K 68000 6FFFF SA21 64K 32K 70000 77FFF SA22 64K 32K 78000 7FFFF SA23 64K 32K 80000 87FFF SA24 64K 32K 88000 8FFFF SA25 64K 32K 90000 97FFF SA26 64K 32K 98000 9FFFF SA27 64K 32K A0000 A7FFF SA28 64K 32K A8000 AFFFF SA29 64K 32K B000...

Страница 18: ... SA13 64K 32K 68000 6FFFF SA14 64K 32K 70000 77FFF SA15 64K 32K 78000 7FFFF SA16 64K 32K 80000 87FFF SA17 64K 32K 88000 8FFFF SA18 64K 32K 90000 97FFF SA19 64K 32K 98000 9FFFF SA20 64K 32K A0000 A7FFF SA21 64K 32K A8000 AFFFF SA22 64K 32K B0000 B7FFF SA23 64K 32K B8000 BFFFF SA24 64K 32K C0000 C7FFF SA25 64K 32K C8000 CFFFF SA26 64K 32K D0000 D7FFF SA27 64K 32K D8000 DFFFF SA28 64K 32K E0000 E7FFF...

Страница 19: ...H X 2 Ai DOUT Program Erase 3 VIL VIH VIL VIH VIHPP 4 Ai DIN Standby Program Inhibit VIH X 2 X VIH X X High Z Program Inhibit X X VIH VIH X X VIL X VIH X X X X VIH VILPP 5 Output Disable X VIH X VIH X High Z Reset X X X VIL X X High Z Product Identification Software VIH A0 VIL A1 A19 VIL Manufacturer Code 6 A0 VIH A1 A19 VIL Device Code 6 7 28 DC Characteristics Symbol Parameter Condition Min Typ ...

Страница 20: ...forms and Measurement Level tR tF 5 ns 30 Output Test Load Note This parameter is characterized and is not 100 tested 1 5V 2 0V 0 6V VCCQ 1 8 1 3 3 31 Pin Capacitance f 1 MHz T 25 C 1 Symbol Typ Max Units Conditions CIN 4 6 pF VIN 0V COUT 8 12 pF VOUT 0V ...

Страница 21: ... OE or CE whichever occurs first CL 5 pF 4 This parameter is characterized and is not 100 tested 32 AC Read Characteristics Symbol Parameter AT49BV160D T 70 Units Min Max tRC Read Cycle Time 70 ns tACC Address to Output Delay 70 ns tCE 1 CE to Output Delay 70 ns tOE 2 OE to Output Delay 0 20 ns tDF 3 4 CE or OE to Output Float 0 25 ns tOH Output Hold from OE CE or Address whichever occurred first ...

Страница 22: ...d Load Characteristics Symbol Parameter Min Max Units tAS tOES Address OE Setup Time 20 ns tAH Address Hold Time 0 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width WE or CE 25 ns tWPH Write Pulse Width High 15 ns tDS Data Setup Time 25 ns tDH tOEH Data OE Hold Time 0 ns ...

Страница 23: ...ress Setup Time 20 ns tAH Address Hold Time 0 ns tDS Data Setup Time 25 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 25 ns tWPH Write Pulse Width High 15 ns tWC Write Cycle Time 70 ns tRP Reset Pulse Width 500 ns tSEC1 Sector Erase Cycle Time 4K Word Sectors 0 1 2 0 seconds tSEC2 Sector Erase Cycle Time 32K Word Sectors 0 5 6 0 seconds tES Erase Suspend Time 15 µs tPS Program Suspend Time 10 µ...

Страница 24: ...24h 0004h 0004h Max dual word program time typ time 25h 0004h 0004h Max sector erase typ sector erase 26h 0000h 0000h Max chip erase typ chip erase 27h 0015h 0015h Device size 28h 0001h 0001h x16 device 29h 0000h 0000h x16 device 2Ah 0002h 0002h Maximum number of bytes in multiple byte write 4 2Bh 0000h 0000h Maximum number of bytes in multiple byte write 4 2Ch 0002h 0002h 2 regions x 2 2Dh 001Eh ...

Страница 25: ... 1 yes Bit 7 protection bits supported 0 no 1 yes 47h 0000h 0001h Bit 8 top 0 or bottom 1 boot sector device undefined bits are 0 48h 0000h 0000h Bit 0 4 word linear burst with wrap around 0 no 1 yes Bit 1 8 word linear burst with wrap around 0 no 1 yes Bit 2 continuos burst 0 no 1 yes Undefined bits are 0 49h 0000h 0000h Bit 0 4 word page 0 no 1 yes Bit 1 8 word page 0 no 1 yes Undefined bits are...

Страница 26: ...e tACC ns ICC mA Ordering Code Package Operation Range Active Standby 70 15 0 025 AT49BV160D 70TU 48T Industrial 40 to 85 C AT49BV160DT 70CU AT49BV160DT 70TU 46C3 48T Package Type 46C3 46 ball Plastic Chip Size Ball Grid Array Package CBGA 48T 48 lead Plastic Thin Small Outline Package TSOP ...

Страница 27: ...75 mm Pitch 6 5 x 7 5 x 1 0 mm Chip scale Ball Grid Array Package CBGA A 46C3 7 2 03 TOP VIEW A1 BALL ID SIDE VIEW A B C D E F 7 6 5 4 3 2 1 D BOTTOM VIEW E E1 e 0 625 REF A1 BALL CORNER 1 875 REF D1 b 8 A A1 COMMON DIMENSIONS Unit of Measure mm SYMBOL MIN NOM MAX NOTE E 6 40 6 50 6 60 E1 5 25 TYP D 7 40 7 50 7 60 D1 3 75 TYP A 1 00 A1 0 22 e 0 75 BSC b 0 35 TYP ...

Страница 28: ... COMMON DIMENSIONS Unit of Measure mm SYMBOL MIN NOM MAX NOTE Notes 1 This package conforms to JEDEC reference MO 142 Variation DD 2 Dimensions D1 and E do not include mold protrusion Allowable protrusion on E is 0 15 mm per side and on D1 is 0 25 mm per side 3 Lead coplanarity is 0 10 mm maximum A 1 20 A1 0 05 0 15 A2 0 95 1 00 1 05 D 19 80 20 00 20 20 D1 18 30 18 40 18 50 Note 2 E 11 90 12 00 12...

Страница 29: ...on Atmel Operations 2325 Orchard Parkway San Jose CA 95131 USA Tel 1 408 441 0311 Fax 1 408 487 2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH 1705 Fribourg Switzerland Tel 41 26 426 5555 Fax 41 26 426 5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel 852 2721 9778 Fax 852 2722 1369 Japan 9F Tonetsu Shinkawa Bldg 1...

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