ADVANTEST 7082000 Series, Руководство по эксплуатации

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3. SPECIFICATIONS
Optical sensor
082014A T082015 Q82017A
Q82018A
Wavelength range 400 t o 1100
nm
800 t o 1600
nm
400 t o 1100
nm
800 t o 1650
nm
Photoreceptor
element
Si PIN
Photo diode Ge
Photo diode
Si PIN
Photo diode
InGaAs PIN
Photo diode
Input type
Photo diode d i r e c t - i n
FC connector''
Photoreceptor
area Approx.
8mm0
Approx.
5mm 0
Approx.
10 x1Omm0
___
Power range's
-60dBm t o
+17dBm
(1nW t o 50mW)
-40dBm t o
+10dBm
(100nW t o 10mW)
-60dBm t o
+17dBm
(1nW t o 50mW)
-60dBm t o
+0dBm
(1nW t o 1mW)
Standard
wavelength
850nm 1300nm 850nm
1300nm
Optical Block TQ82011
Q82021A
Optical sensor
- - - -
Wavelength range 400 t o 1100nm
Photoreceptor
element
Si PIN Photo diode
Input type
FC
connector"
Photo diode
direct- i n
Photoreceptor
area
- - -
Approx.
10 X 10mmO
Power range's
-60dBm t o
+10dBm
(1nW t o
10mW)
-60dBm t o
+17dBm
(1nW t o
50mW)
Standard
wavelength
850nm
*1: Regarding connectors n o t
described herein, please
contact w i t h us.
*2: A t t h e case o f standard
wavelength respectively
* 1 : E a k : 1 4 0 9 1 : - ) 1 , % T
1 2 1 4 4 . : 4 B A T L I .
4 A - T t .
(Note) The 082014A, Q82017A o r Q82021A may l o s e wavelength s e n s i t i v i t y i n t h e 400nm
band when used i n very humid conditions. These sensors should n o t be used i n
an environment a t high temperatures o r humidities when measurements are taken
in the 400nm band. Other bands are n o t a ff e c t e d , s o measurements can be taken
freely.
( i t ) Q82014A, Q82017A, Q82021A 4 0 0 n m *4:-..tswrffili € 03Eilit-fe.1I, i t i t & S / t h l &
*1:.411:1-"Clo< . 1 " 0 1 1 1 4 l i t o r A l t I t s W M A i i c O R t i g - F t - i t
11V1-lot:195, 1100nm*TBBRI-4-64,1•12, " " e t
-C t i e
t i t s , 400nm *1;140i5tRizts‘%--C1I, ;:(7).:t i S f r B g A i t i t i e z :
3