Abov MC96F6332SD, Руководство пользователя

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MC96F6432S ABOV Semiconductor Co., Ltd.
7.15 Internal Flash Rom Characteristics
(T
A
=-40°C ~ +85°C, VDD=1.8V ~ 5.5V, VSS= 0V)
Parameter Symbol Condition MIN TYP MAX Unit
Sector Write Time t
FSW
– –
2.5 2.7
ms Sector Erase Time t
FSE
– –
2.5 2.7
Code Write Protection Time t
FHL
– –
2.5 2.7
Page Buffer Reset Time t
FBR
– – –
5 us
Flash Programming Frequency f
PGM
–
0.4
– –
MHz
Endurance of Write/Erase NF
WE
– – –
100,000 times
Flash Data Retention Time t
RT
–
10
– –
Years
Table 7.16
Internal Flash Rom Characteristics
NOTE)
1. During a flash operation, SCLK[1:0] of SCCR must be set to
“00” or “01” (INT-RC OSC or Main X-TAL
for system clock).
7.16 Input/Output Capacitance
(T
A
=-40°C ~ +85°C, VDD=0V)
Parameter Symbol Condition MIN TYP MAX Unit
Input Capacitance C
IN
fx= 1MHz
Unmeasured pins are
connected to VSS
– –
10 pF Output Capacitance C
OUT
I/O Capacitance C
IO
Table 7.17
Input/Output Capacitance