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Philips Semiconductors

Product specification

 Logic level TOPFET

PIP3107-D 

DESCRIPTION

QUICK REFERENCE DATA

Monolithic temperature and

SYMBOL

PARAMETER

MAX.

UNIT

overload protected logic level power
MOSFET in TOPFET2 technology

V

DS

Continuous drain source voltage

50

V

assembled in a 3 pin surface mount

I

D

Continuous drain current

16

A

plastic package.

P

D

Total power dissipation

65

W

T

j

Continuous junction temperature

150

˚C

APPLICATIONS

R

DS(ON)

Drain-source on-state resistance

50

m

General purpose switch for driving

I

ISL

Input supply current

V

IS

 = 5 V

650

µ

A

lamps
motors
solenoids
heaters

FEATURES

FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads

Fig.1.   Elements of the TOPFET.

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

input

2

drain

3

source

tab

drain

DRAIN

SOURCE

INPUT

RIG

LOGIC AND

PROTECTION

O / V

CLAMP

POWER

MOSFET

1

2

3

tab

P

D

S

I

TOPFET

October 2001

1

Rev 1.000

Summary of Contents for Logic Level TOPFET PIP3107-D

Page 1: ...nput supply current VIS 5 V 650 µA lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro co...

Page 2: ...amp overvoltage transients SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Inductive load turn off IDM 16 A VDD 20 V EDSM Non repetitive clamping energy Tmb 25 C 200 mJ EDRM Repetitive clamping energy Tmb 95 C f 250 Hz 32 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin TOPFET can protect itself from two types of overload overtemperature and short circui...

Page 3: ...IS 4 V 100 mΩ Tmb 25 C 39 55 mΩ OVERLOAD CHARACTERISTICS 40 C Tmb 150 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Short circuit load VDS 13 V ID Drain current limiting VIS 5 V Tmb 25 C 16 24 32 A 4 4 V VIS 5 5 V 12 36 A 4 V VIS 5 5 V 8 36 A Overload protection VIS 5 V Tmb 25 C PD TO Overload power threshold device trips if PD PD TO 40 120 160 W TDSC Characteristic tim...

Page 4: ... 5 V 200 400 650 µA VIS 3 V 130 250 430 µA VISR Protection reset voltage1 reset time tr 100 µs 1 5 2 2 9 V tlr Latch reset time VIS1 5 V VIS2 1 V 10 40 100 µs V CL IS Input clamping voltage II 1 5 mA 5 5 8 5 V RIG Input series resistance2 Tmb 25 C 33 kΩ to gate of power MOSFET SWITCHING CHARACTERISTICS Tmb 25 C VDD 13 V resistive load RL 4 Ω Refer to waveform figure and test circuit SYMBOL PARAMET...

Page 5: ...28 E b2 D1 w A M b c b1 L1 L 1 3 2 D E1 HE L2 Note 1 Measured from heatsink back to lead e1 e A A2 A A1 y seating plane mounting base A1 1 D max b D1 max E max HE max w y max A2 b2 b1 max c E1 min e e1 L1 min L2 L A max UNIT DIMENSIONS mm are the original dimensions 0 2 0 2 mm 2 38 2 22 0 65 0 45 0 89 0 71 0 89 0 71 1 1 0 9 5 36 5 26 0 4 0 2 6 22 5 98 4 81 4 45 2 285 4 57 10 4 9 6 0 5 0 7 0 5 6 73...

Page 6: ...cteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the c...

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