1
Transistors
Publication date: April 2007
SJC00362AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Silicon NPN epitaxial planar type
For high-frequency amplification
■
Features
•
Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios
•
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
30
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
5
V
Forward current transfer ratio
*
h
FE
V
CE
=
10 V, I
C
=
1 mA
70
250
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
1 mA, f
=
200 MHz
150
230
MHz
Reverse transfer capacitance
C
re
V
CB
=
10 V, I
E
=
−
1 mA, f
=
10.7 MHz
1.3
pF
(Common emitter)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
B
C
h
FE
70 to 160
110 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■
Package
•
Code
SMini3-F2
•
Marking Symbol: K
•
Pin Name
1. Base
2. Emitter
3. Collector
