Transistors
Publication date: April 2007
SJC00351AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2122G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5950G
Features
High forward current transfer ratio h
FE
Smini typ package, allowing downsizing of the equipment and
automatic
insertion through the tape packing
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-
60
V
Collector-emitter voltage (Base open)
V
CEO
-
50
V
Emitter-base voltage (Collector open)
V
EBO
-
7
V
Collector current
I
C
-
100
mA
Peak collector current
I
CP
-
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-
55 to
+
150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
-
10
m
A, I
E
= 0
-
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
-
2 mA, I
B
= 0
-
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
-
10
m
A, I
C
= 0
-
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
-
20 V, I
E
= 0
-
0.1
m
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
-
10 V, I
B
= 0
-
100
m
A
Forward current transfer ratio
h
FE
V
CE
=
-
10 V, I
C
=
-
2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-
100 mA, I
B
=
-
10 mA
-
0.2
-
0.5
V
Transition frequency
f
T
V
CB
=
-
10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
=
-
10 V, I
E
= 0, f = 1 MHz
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SMini3-F2
Marking symbol : 7L
Pin name
1. Base
2. Emitter
3. Collector
