Schottky Barrier Diodes (SBD)
1
Publication date: April 2003
SKH00030BED
MA2SE01
Silicon epitaxial planar type
For mixer
■
Features
•
High-frequency wave detection is possible
•
Low forward voltage V
F
•
Small terminal capacitance C
t
•
SS-Mini type 2-pin package
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Maximum peak reverse voltage
V
RM
20
V
Forward current
I
F
35
mA
Peak forward current
I
FM
100
mA
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
0.41
V
V
F2
I
F
=
35 mA
1.0
V
Reverse current
I
R
V
R
=
15 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
1.2
pF
Forward dynamic resistance
r
f
I
F
=
5 mA
40
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 4L
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Unit: mm
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
±
0.05
0.01
±
0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).
