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PIN Diodes

Publication date: September 2003

SKL00016AED

MA27P07

Silicon planar type

For high frequency switch

Features

Low terminal capacitance: C

t

 

 0.35 pF

Low forward dynamic resistance: r

f

 

≤ 

1.5 

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

60

V

Forward current

I

F

100

mA

Power dissipation

P

D

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to 

+

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

 Unit

Forward voltage

V

F

I

F

 

=

 10 mA

1.0

V

Reverse current

I

R

V

R

 

=

 60 V

100

nA

Terminal capacitance

C

t

V

R

 

=

 1 V, f 

=

 1 MHz

0.35

pF

Forward dynamic resistance

r

f

I

F

 = 10 mA, f = 100 MHz

1.5

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

1: Anode
2: Cathode

SSSMini2-F2 Package

Unit: mm

5

°

5

°

0.27

1

2

1.40

±0.05

0.52

±0.03

1.00

±0.05

0.60

±0.05

0.15 min.

0 to 0.01

0.15 min.

0.15 max.

+0.05

–0.02

0.12

+0.05

–0.02

Marking Symbol: K

This product complies with the RoHS Directive (EU 2002/95/EC).

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