Panasonic Photo IC PNA4601M, Specifications

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SHE00064AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Photo IC
PNA4601M
Photodiode with Photodetection Function
For infrared remote control systems

Features

Extension distance: 8 m or more

External parts not required

Adoption of visible light cutoff resin

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Operating supply voltage V
CC
– 0.5 to +7 V
Power dissipation P
D
200 mW
Operating ambient temperature T
opr
–20 to +75 ° C
Storage temperature T
stg
–40 to +100 ° C
Soldering temperature * T
sol
260
° C
Note) *: Less than 5 s

Electrical-Optical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Operating supply voltage V
CC
4.7 5.0 5.3 V
Supply current I
CC
No signal condition 1.8 2.4 3.0 mA
Maximum reception distance *1 L
max
8.0 10.0 m
Low level output voltage *2 V
OL
L ≤ 8.0 m, I
OL
= 400 μ A 0.35 0.5 V
High level output voltage V
OH
No signal condition, I
OH
= − 10 μ A 4.75 4.80 V
Low level pulse width *1
T
WL1
L = 8.0 m, 16 pulse 200 400 600 μ s
T
WL2
L = 0.2 m, 16 pulse, T
a
= 65 ° C ± 3° C 100 700
μ s
High level pulse width *1 T
WH
L = 8.0 m, 16 pulse 200 400 600 μ s
Center frequency f
O
36.7 kHz
Load resistance R
L
15 20 25 k W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: Burst wave form fi gure 1.
*2: Constant wave form Figure 2..
400 µ s 400 µ s 20 ms
Carrier frequency: f
O
Carrier frequency: f
O
Figure 2 Figure 1