Transistors
Publication date : December
2004
SJC
00324
AED
1
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to
2
SA
2162
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
12
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–
55
to +
125
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1
mA, I
B
=
0
12
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10
V, I
E
=
0
0
.
1
µ
A
Forward current transfer ratio
h
FE
V
CE
=
2
V, I
C
=
10
mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
200
mA, I
B
=
10
mA
250
mV
Transition frequency
f
T
V
CB
=
2
V, I
E
= –
10
mA, f =
200
MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
=
10
V, f =
1
MHz
4
.
5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collecter
SSSMini3-F1 Package
1.20
±
0.05
0.5
2
±
0.03
0 to 0.01
0.15 max.
5°
0.15 min
.
0.80
±
0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5°
0.80
±
0.05
1.20
±
0.05
+
0.05
−
0.02
0.10
+
0.05
−
0.02
0.23
+
0.05
−
0.02
Marking Symbol :
4
U
This product complies with the RoHS Directive (EU 2002/95/EC).
